Competition of non-Hermitian skin effect and topological localization of corner states observed in circuits

Tang, Chan; Yang, Huanhuan; Song, Langzhou; Yao, Xianglong; Peng, Yan; Cao, Yunshan

doi:10.1103/physrevb.108.035410

Cited by 5 publications

(4 citation statements)

References 53 publications

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“…和非厄米趋肤效应 [35,74,119,128,144,145] 以及高阶拓扑角态 [126,127,146] 的测量. 不过需要注意的是, 本方法只适用于本征频率谱为近实谱(即本征频率的虚部很小)的情况, 因为扫描频率w只能是实数.…”

Section: 两点间阻抗unclassified

“…INIC [41,74,121,123,127,138,145,146] 或电压跟随器 [119,124,129] 等主动元件实现对非互易跃迁的模拟, 通过电路中电压响应的分布观测非厄米趋肤效应. 目前, 利用经典电路已实现对非厄米系统中多种非厄米趋肤效应及相关奇异现象的研究和模拟, 包括一维非厄米趋肤效应和传统体边对应关系的失效 [41,119] 、非布洛赫波的演化和广义布里渊区 [127] 、高维非厄米趋肤效应 [118] 、高阶非厄米趋肤效应 [121,124,128] 、多体非厄米趋肤效应 [123] 、临界非厄米趋肤效应 [125] 以及尺寸依赖的非厄米趋肤效应 [129] 等.…”

Section: 电路的实验中研究者们通常在电路节点间加入unclassified

“…. 2022年, Deng等 [145] 研究了一个一维N次方根非厄米SSH模型 [图7(c)], 其中N的大小可以通过调整原胞内电容电感等元器件的数目实现. 实验中, 他们选择了不同的N对节点电压进行测量, 观测到电压分布集中在电路节点的一侧, 即出现了非厄米趋肤效应, 并发现非厄米趋肤效应随N的增大变得更加明显.…”

Section: 杂化高阶拓扑趋肤效应是在高维系统中由非厄米unclassified

“…在用经典电路模拟非厄米趋肤效应的同时, 人们也对其他非厄米拓扑物态进行了模拟, 包括单纯由增益/耗损诱导的非厄米拓扑态 [74] 、非厄米连续谱中的束缚态(bound state in the continuum) [144] 、杂化高阶趋肤拓扑态 [121] 、高阶拓扑角态 [122,127] 、 N次方根拓扑相 [145] 、二阶手性系统中的拓扑态及动力学 [126] 、非厄米拓扑开关 [138] 以及非厄米Hopf 束 [128] 等.…”

Section: 其他非厄米拓扑态unclassified

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Electrical circuit simulation of non-Hermitian lattice models

Xu,

Zhou

et al. 2023

Acta Phys. Sin.

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Quantum simulation serves as a significant tool for studying and understanding novel phenomena in the quantum world. In recent years, it has be realized that apart from quantum platforms, classical systems like photonic crystals, phononic crystals, and mechanical oscillators can also be employed to simulate quantum models by analogizing the Schrödinger equation. Among these systems, electrical circuits have emerged as a promising simulation platform owing to their low cost, technological maturity, and ease of scalability, successfully simulating numerous important quantum phenomena. Meanwhile, non-Hermitian physics breaks the Hermiticity of systems' Hamiltonians in traditional quantum mechanics, providing a fresh perspective for understanding the physics of quantum systems, particularly open quantum systems. Non-Hermitian systems, due to their manifestation of unique phenomena absent in Hermitian systems, have become emerging research subjects in various fields of physics. However, many non-Hermitian phenomena require specialized configurations that pose relatively high technical thresholds on quantum platforms. For instance, the nonHermitian skin effect typically requires systems with non-reciprocal hopping between lattice sites. Therefore, utilizing flexible electrical circuits to simulate non-Hermitian physics becomes a natural choice. This paper provides a short review of the current experimental progress in simulating non-Hermitian lattice models using electrical circuits. It offers a brief introduction to the relevant knowledge of non-Hermitian physics, including mathematical concepts and novel phenomena, as well as the simulation theory of electrical circuits, including the mapping theory of the lattice models, the introduction of non-Hermiticity, the measurement of physical quantities, etc. The aim is to provide readers with a reference for better understanding or engagement in related research works, promoting further development in this field.

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Section: 两点间阻抗unclassified

Section: 电路的实验中研究者们通常在电路节点间加入unclassified

Section: 杂化高阶拓扑趋肤效应是在高维系统中由非厄米unclassified

Section: 其他非厄米拓扑态unclassified

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Electrical circuit simulation of non-Hermitian lattice models

Xu,

Zhou

et al. 2023

Acta Phys. Sin.

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Energy Localization and Topological Defect in Spherical Non‐Hermitian Topolectrical Circuits

Shen,

Wang,

Guo

et al. 2024

Annalen der Physik

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This work examines the energy localization in non‐Hermitian systems, with a particular focus on the influence of topological defects in spherical models. Alterations in the mode distribution are explored within non‐Hermitian Su‐Schrieffer‐Heeger (SSH) chains affected by these defects, utilizing the Maximum Skin Corner Weight (MaxWSC) metric. An innovative spherical model is introduced, created by segmenting spheres into 1D chain structures, to study the non‐Hermitian skin effect (NHSE) within a spherical geometric framework. Experimental validations conducted on Printed Circuit Boards (PCBs) corroborate the theoretical insights. These findings not only substantiate the theoretical approach but also illustrate the capability of engineered circuit systems to mimic complex non‐Hermitian phenomena, highlighting the utility of spherical geometries in exploring NHSE and topological phenomena in non‐Hermitian systems.

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