Complementary GaAs(CGaAs): a high performance BiCMOS alternative

Bernhardt, B.; LaMacchia, M.; Abrokwah, J.; Hallmark, Jerry; Lucero, R.; Mathes, B.; Crawforth, B.; Foster, D.J.; Clauss, K.; Emmert, S.; Lien, Tormod; López, E.; Mazzotta, V.; Oh, Bong Ryoul

doi:10.1109/gaas.1995.528953

Cited by 18 publications

(13 citation statements)

References 4 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The example is a handdesigned mux-flip flop standard cell implemented in a complementary GaAs process [Bernhardt et al 1995]. This example demonstrates a number of properties which deviate from the standard one-dimensional style:…”

Section: Motivationmentioning

confidence: 98%

Transistor placement for noncomplementary digital VLSI cell synthesis

Riepe

Sakallah²

2003

ACM Trans. Des. Autom. Electron. Syst.

View full text Add to dashboard Cite

There is an increasing need in modern VLSI designs for circuits implemented in high-performance logic families such as Cascode Voltage Switch Logic (CVSL), Pass Transistor Logic (PTL), and domino CMOS. Circuits designed in these noncomplementary ratioed logic families can be highly irregular, with complex diffusion sharing and nontrivial routing. Traditional digital cell layout synthesis tools derived from the highly stylized "functional cell" style break down when confronted with such circuit topologies. These cells require a full-custom, two-dimensional layout style which currently requires skilled manual design. In this work we propose a methodology for the synthesis of such complex noncomplementary digital cell layouts. We describe a new algorithm which permits the concurrent optimization of transistor chain placement and the ordering of the transistors within these diffusion-sharing chains. The primary mechanism for supporting this concurrent optimization is the placement of transistor subchains, diffusion-break-free components of the full transistor chains. When a chain is reordered, transistors may move from one subchain (and therefore one placement component) to another. We will demonstrate how this permits the chain ordering to be optimized for both intra-chain and inter-chain routing. We combine our placement algorithms with third-party routing and compaction tools, and present the results of a series of experiments which compare our technique with a commercial cell synthesis tool. These experiments make use of a new set of benchmark circuits which provide a rich sample of representative examples in several noncomplementary digital logic families.

show abstract

Section: Motivationmentioning

confidence: 98%

Transistor placement for noncomplementary digital VLSI cell synthesis

Riepe

Sakallah²

2003

ACM Trans. Des. Autom. Electron. Syst.

View full text Add to dashboard Cite

show abstract

“…The 4K SRAM had nominal access delays of 5.311s at 1.5 V and 15.011s at 0.9 V. SRAM power ranged from 0.36 mW at 0.9 V to 16.2 mW at 1.5 V [3]. This power was significantly lower than other GaAs SRAM designs (Fig.…”

Section: A Complementary Designsmentioning

confidence: 91%

Complementary GaAs (CGaAs) technology and applications

Hallmark

Abrokwah

Bernhardt³

et al.

Proceedings of ISSE'95 - International Symposium on Signals, Systems and Electronics

Self Cite

View full text Add to dashboard Cite

A self aligned complementary GaAs (CGaAsTh4) technology has been developed for low-power, high-speed digital and mixed-mode applications. A single process flow has been used to build low-voltage, low-power, full-complementary digital circuits at 200MHz, high-speed SCFL digital circuits at SGHz, RF MMIC and power circuits (900MHz), and combinatioms of these. Complementary digital circuits have demonstrated speed-power performance of 0.1pWIMHzJgate at 0.9V. A mixed SCFll Complementary signal processor operated at > lGHz with a speed-power performance of 0.16pWIMHdgate.

show abstract

“…This performance improvement has been in the form of much lower static leakage paths as the LTG material provides better isolation between devices. Figure 4 also shows that at high frequency the speed power product decreases significantly and has been shown to be lower than standard CMOS or TFSOI CMOS [5]. Optimization to the LTG starting material to improve the complementary circuit speed, while maintaining the lower power operation, is ongoing.…”

Section: Performance Impact Of Ltg Starting Materialsmentioning

confidence: 99%

“…IV. Increased Level of Integration Previous work using the CGaAsTM process concentrated on circuits of 5-10K gates of complexity as demonstrated with a 4K SRAM and high speed signal processor designs [5,6]. The level of integration for the process has since been increased as demonstrated with the LSI implementation of a 16 channel signal distribution circuit shown in Figure 5 .…”

Section: Performance Impact Of Ltg Starting Materialsmentioning

confidence: 99%

Radiation hardened complementary GaAs(CGaAs/sup TM/)

LaMacchla

Abrokwah²,

Bernhardt³

et al.

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997

Self Cite

View full text Add to dashboard Cite

Tlie addition of a low tempmittre GitAs (LTG) lnyer to growth or the LTG layer, a dlflilsion biarricr of high aluminum the self-alignd eotnplanentarp' G a s (CGaAs'") I [IGFIJ'T structure rnolc f"ctior1 AIGaAs was growl to nininkide As out diffusion has reduced the SlXJ sensitivity HIhIlc improving t hc short ctiiinrd during &sequent pmccssing.The barrier Bayer is displaced by chrtructeristics of the IJ-cchatmel PNZ'ETs Subthn.diolC1 l&agc an undoped G A S layer away the thrcshold adjustment silicon cwxnts, gate leakage, ~ido~tt~ulcoiducliuicis have beti significmtly delta doping below the InGaAs channcl layer in order to reduced Iksigiis of 170K tramistor complexity lime b e n niainuunas low a source mAtiknce as possmbk. The

show abstract

Complementary GaAs(CGaAs): a high performance BiCMOS alternative

Cited by 18 publications

References 4 publications

Transistor placement for noncomplementary digital VLSI cell synthesis

Transistor placement for noncomplementary digital VLSI cell synthesis

Complementary GaAs (CGaAs) technology and applications

Radiation hardened complementary GaAs(CGaAs/sup TM/)

Contact Info

Product

Resources

About