Complementary Inverter Based on n‐Type and p‐Type OFETs with the Same Ambipolar Organic Semiconductor and ITO S/D Electrodes

Abstract

Bottom‐gate and bottom‐contact n‐type and p‐type organic field‐effect transistors (OFETs) are simultaneously obtained by combining the ambipolar semiconductor film of diketopyrrolopyrrole‐based conjugated polymer (P4FTVT‐C32) with indium tin oxide (ITO) source/drain (S/D) electrodes. P4FTVT‐C32 thin film exhibits n‐type unipolar property with the low work functional (WF) ITO S/D electrodes modified by polyethylenimine ethoxylated (PEIE) and it exhibits p‐type unipolar property with the high WF ITO S/D electrodes modified by HCl:InCl3. Hence, complementary inverters with transition voltages near VDD/2 and the maximum gain of 138 converting “1” state input into “0” state output are achieved by two different modifications via screen printing on ITO electrodes and then, only one‐time bar coating of P4FTVT‐C32. To further improve the performance and the uniformity of the OFET devices, the modification of octadecyltrichlorosilane (OTS) is also introduced. This work provides an easy‐handling method for the fabrication of low‐cost, high performance organic electronic devices and integrated circuits.

Long-range polymer ordering by directional coating to remarkably enhance the charge carrier mobility in PCDTPT-based organic field-effect transistors

“…In the past three decades, organic field-effect transistors (OFETs) have embarked upon the immense interest of researchers owing to their solution processibility, low-temperature processing, low-cost fabrication and compatibility with plastic substrates [1][2][3][4][5][6]. The research efforts have resulted in significant breakthroughs in the performance of OFETs based on π-conjugated organic semiconductors (OSCs) including small molecules and polymers.…”

High-Performance Organic Field-Effect Transistors of Liquid Crystalline Organic Semiconductor by Laser Mapping Annealing

“…Based on excellent properties, low cost, and wide manufacturability, organic field-effect transistors (OFETs) are the key components for flexible electronic devices and circuits [ 1 , 2 ]. The organic semiconductors are often manufactured as a thin film layer between the dielectric layer and the electrodes in an OFET device [ 3 ], which is a three-terminal electronic device that includes the source, drain, and gate [ 4 ].…”

“…Moreover, the characteristics of the active material itself and the subsequent treatments in the device preparation also play key roles in enhancing the device’s capabilities, including interface modification, annealing, and so on [ 16 , 17 , 18 ]. A self-assembled monolayer (SAM) is commonly applied in surface modification to modify the affinity energy [ 3 , 19 , 20 , 21 ].…”

Conjugated polymers with near-infrared (NIR) optical absorption: structural design considerations and applications in organic electronics

“…[17][18][19][20] Recently, significant research effort has been focused on the development of CPs with near-infrared (NIR) optical absorption (750-2500 nm) to increase light harvesting capabilities in OPV, 21,22 provide optical transparency for smart-windows and photovoltaic green houses, 23,24 enable new capabilities in active camouflage, 25,26 provide discrete, transparent electronics, 27,28 and narrow bandgaps to enable ambipolar charge transport. 14,29,30 Compared to their inorganic counterparts possessing NIR-IR optical absorption, e.g. bulk III-V semiconductors, 31,32 quantum dots, 33 and 2D materials, 34,35 NIR-CPs are overall more sustainable and relatively non-toxic, are mechanically robust (flexible and stretchable), and provide ease of tuning the optical, electronic, and physicochemical properties.…”