Complementary Metal Oxide Semiconductor-Compatible Top-Down Fabrication of a Ni/NiO Nanobeam Room Temperature Hydrogen Sensor Device

Abstract

Miniaturized chemical sensors are of immense utility for low-power-consuming, on-chip-integrable functional devices. In this letter, complementary metal oxide semiconductor (CMOS)-compatible fabrication of a suspended Ni/NiO nanobeam gas sensor device showing a selective response to hydrogen gas at room temperature is reported. The dimensions of the suspended Ni beam are 100 nm × 1 μm, and the thickness varied from 15 and 20 nm. Further, it is oxidized using either thermal oxidation or plasma oxidation. The selective response obtained is a nearly 50% change in resistance for 5000 ppm of H2 at 25 °C in plasma-oxidized-sputtered Ni films. The joule heating results in thermal oxidation viz-a-viz electromigration of Ni metal self-functionalization and helps in the selective response toward hydrogen.

Materials Nanoarchitectonics at Dynamic Interfaces: Structure Formation and Functional Manipulation

“…One of them is its application to artificial functional structures such as devices. In such fields, top–down processing technologies such as microfabrication have been applied [ 423 , 424 , 425 ]. This can be converted to a bottom–up approach through introducing nanoarchitectonics at dynamic interfaces.…”

Growth Processing and Strategies: A Way to Improve the Gas Sensing Performance of Nickel Oxide-Based Devices

“…Notably, film thickness of sputtered NiO as sensing material is very important for gas detection efficiency [19][20][21], and Table 1 provides a summary of experimental conditions that enable the adjustment of thickness using different modes, pressure, power, and time. NiO thin film has been widely deposited via sputtering.…”