Complementary multi guard ring JBS structures: Numerical analysis

Koel, Ants; Rang, Toomas; Rang, G.

doi:10.1109/bec.2010.5630911

Cited by 1 publication

(3 citation statements)

References 7 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Using the Silvaco device simulator ATLAS, an attempt was made to verify the results [2]. Simulations verified the behaviour of JBS diodes based on n-SiC but did not confirm the measurement results for p-SiC devices.…”

Section: Figurementioning

confidence: 95%

“…The traps with their associated energy (additional energy levels in forbidden gap) exchange the charge with the conduction or valence band through the emission processes, which changes the recombination rate (statistics) inside the bulk semiconductor material. The donor and acceptor type traps' density determines:       tA tD T N N q Q (2) where N tD + and N tA are the densities of the ionised donor-like and acceptor-like traps respectively, and the total charge (the density of traps) determines:…”

Section: Figurementioning

confidence: 99%

“…Most technologies currently used to produce SiC devices were empirically developed rather than based on a solid theoretical background. The developments of high-speed power devices based on SiC over the last few decades has paid special attention to junction-barrier Schottky (JBS) diodes, in which regions of pn-and Schottky barrier (SB) junctions are alternated in short periods of a few to several µm [1][2][3]. The advantages of the JBS diodes are SB-diode-like forward characteristics with low turn-on voltages and pn-diode-like reverse characteristics with low current leakage.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Numerical analysis of the influence of deep energy level traps in SiC Schottky structures

Koel¹,

Rang²,

Rang³

2012

WIT Transactions on the Built Environment

View full text Add to dashboard Cite

The Thomas Johann Seebeck Department of Electronics at the Tallinn University of Technology has studied the properties of Schottky contacts since the 1980s. The theoretical studies have been accompanied by analytical and numerical computer simulations. Realisation of SiC complementary power Schottky diodes has been possible since 1994, using diffusion welding (DW) metallisation technology. Measurement of the electrical properties of the produced samples offers excellent possibility to verify and enhance computer models, and as feedback provides possible explanations to phenomenon found in the measurement results.This paper provides a comparison between measured and simulated results for SiC Schottky power diode structures. The paper addresses the simulation results investigating the influence of deep energy traps and/or defects on electrical characteristics of SiC Schottky diodes manufactured using DW metallisation technology. The numerical model includes the exact model for describing the behaviour of deep energy traps in the epitaxial layer. The analysis takes into account the influence of ambient temperature on static characteristics of the device. The outcome of this particular research is addressed for the optimisation of the switching devices applied in the power converters, with the aim of reducing the general energy consumption in different power grids.

show abstract

Section: Figurementioning

confidence: 95%

Section: Figurementioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation