Silicon-based technologies provide an ideal platform for the monolithic integration of photonics and microelectronics. In this context, a variety of passive and active silicon photonic devices have been developed to operate at telecom and datacom wavelengths, at which silicon has minimal optical absorption -due to its bandgap of 1.12 eV. Although in principle this transparency window limits the use of silicon for optical detection above 1.1 µm, in recent years tremendous advances have been achieved in the field of all-silicon subbandgap photodetectors at telecom and datacom wavelengths -by taking advantage of new emerging materials and structures. In this paper, a review of the state of the art is presented.Devices based on defect-mediated absorption, two-photon absorption and the internal photoemission effect are reported, their working principles are elucidated and their performance discussed and compared.