Complete suppression of filamentation and superior beam quality in quantum-dot lasers

Ribbat, C.; Sellin, R.L.; Kaiander, I.; Hopfer, F.; Ledentsov, N. N.; Bimberg, D.; Kovsh, A. R.; Ustinov, V. M.; Zhukov, A. E.; Maximov, M. V.

doi:10.1063/1.1533841

Cited by 99 publications

(24 citation statements)

References 21 publications

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“…The response to external modulations or perturbations [RAD07,GRI11], the laser linewidth [HEN82], and the occurrence of dynamical instabilities as well as pattern formation in spatially extended laser systems [SMO02,RIB03] all crucially depend on this amplitude-phase coupling. Throughout the literature, this connection is commonly described by assuming a linear relationship between changes of the resonance frequency shift and gain.…”

Section: Amplitude-phase Coupling In Quantum-dot Lasersmentioning

confidence: 99%

Nonlinear and Nonequilibrium Dynamics of Quantum-Dot Optoelectronic Devices

Lingnau

2015

Springer Theses

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In this thesis the dynamics and performance of optoelectronic devices based on semiconductor quantum-dots are investigated.In the first part, the dynamics of quantum-dot lasers under external perturbations is discussed. Using a microscopically based balance equation model that incorporates detailed charge-carrier scattering dynamics and the possibility to describe nonequilibrium between intra-band electronic states, the relaxation oscillations of the quantum-dot laser are investigated. Three qualitatively different dynamic regimes are identified in dependence of the scattering rates -the "constantreservoir" regime for slow scattering, the "overdamped" regime, and the "synchronized" regime for high scattering -characterized by a varying degree of nonequilibrium between the quantum-dot and reservoir states.Important differences to conventional lasers are found in the modulation response and the dynamics in optical injection and feedback setups. Common theoretical models and approaches used to describe these applications are shown to yield inaccurate predictions, especially in the "constant-reservoir" and "overdamped" dynamic regimes. An important consequence is that the amplitude-phase coupling in quantum-dot lasers, commonly described by the α-factor, differs from conventional descriptions due to the desynchronization of gain and refractive index. While the α-factor describes bifurcations of fixed points accurately, it fails in describing dynamic solutions and overestimates the extent of complex dynamics. The observed low sensitivity to optical perturbations in quantum-dot lasers can therefore be attributed partly to the charge-carrier nonequilibrium. Three quantum-dot laser models on different levels of sophistication are presented that can accurately describe the quantum-dot nonequilibrium dynamics.In the second part of the thesis, the performance of quantum-dot semiconductor optical amplifiers is investigated, and two types of applications unique to quantum-dots as active medium are discussed. The ground and excited states of the quantum-dots allow an ultra-broad-band amplification of optical data streams. Amplified signals on the ground-state frequencies are shown to generally exhibit higher quality than on the excited state, due to a lower sensitivity of the groundstate to carrier-density variations. Nevertheless the quantum-dot amplifier is found to allow effective amplification on both frequency ranges. Furthermore, a parameter range is identified that allows for a simultaneous amplification of data signals on the ground and excited state in a counter-propagating setup.The long microscopically polarization dephasing times in quantum-dots are found to enable quantum-coherent interactions on a macroscopic scale at room-temperature. By comparison with experiments, the occurrence of Rabi-oscillations by amplification of ultra-short pulses is demonstrated. Quantum-dot based devices could therefore be used for future applications based on quantum-coherent effects.

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Section: Amplitude-phase Coupling In Quantum-dot Lasersmentioning

confidence: 99%

Nonlinear and Nonequilibrium Dynamics of Quantum-Dot Optoelectronic Devices

Lingnau

2015

Springer Theses

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“…The spectral flexibility afforded by QD lasers at low pump currents has enabled the demonstration of tunabilities up to 208 nm [8] and 136 nm [59] in CW and mode−locked regimes, respectively, while output power levels up to 0.97 W have been achieved [7], outperforming QD−based VECSELs in tunability, power and wallplug efficiency in the same spectral region [50]. It is anticipated that optical power scaling efforts can successfully continue in the near future, supported by QD lasers' enhanced resilience to beam filamentation compared to QW lasers [87,88], and higher threshold of catastrophic optical damage, which is likely to be assisted by a much lower diffusion of carriers towards the laser facets [89].…”

Section: Discussionmentioning

confidence: 99%

Unlocking Spectral Versatility from Broadly−Tunable Quantum−Dot Lasers

White

Cataluna

2015

Photonics

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Wavelength−tunable semiconductor quantum−dot lasers have achieved impressive performance in terms of high−power, broad tunability, low threshold current, as well as broadly tunable generation of ultrashort pulses. InAs/GaAs quantum−dot−based lasers in particular have demonstrated significant versatility and promise for a range of applications in many areas such as biological imaging, optical fiber communications, spectroscopy, THz radiation generation and frequency doubling into the visible region. In this review, we cover the progress made towards the development of broadly−tunable quantum−dot edge−emitting lasers, particularly in the spectral region between 1.0-1.3 µm. This review discusses the strategies developed towards achieving lower threshold current, extending the tunability range and scaling the output power, covering achievements in both continuous wave and mode−locked InAs/GaAs quantum−dot lasers. We also highlight a number of applications which have benefitted from these advances, as well as emerging new directions for further development of broadly−tunable quantum−dot lasers.

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“…QD lasers benefit from the reduced lateral charge carrier diffusion due to trapping in the QDs [61][62][63]. The effect was shown to suppress beam filamentation observed in quantum well lasers [62]. Moreover, nonradiative surface recombination decreases.…”

Section: Quantum Dot Lasermentioning

confidence: 99%

“…QD layers represent small grouped peaks in the gain region, which is clad by the DBR and a window layer on the left-and right-hand sides, respectively. QD lasers benefit from the reduced lateral charge carrier diffusion due to trapping in the QDs [61][62][63]. The effect was shown to suppress beam filamentation observed in quantum well lasers [62].…”

Section: Quantum Dot Lasermentioning

confidence: 99%

Vertical-external-cavity surface-emitting lasers and quantum dot lasers

Shan¹,

Zhao²,

Hu³

et al. 2012

Front. Optoelectron.

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The use of cavity to manipulate photon emission of quantum dots (QDs) has been opening unprecedented opportunities for realizing quantum functional nanophotonic devices and also quantum information devices. In particular, in the field of semiconductor lasers, QDs were introduced as a superior alternative to quantum wells to suppress the temperature dependence of the threshold current in vertical-external-cavity surface-emitting lasers (VECSELs). In this work, a review of properties and development of semiconductor VECSEL devices and QD laser devices is given. Based on the features of VECSEL devices, the main emphasis is put on the recent development of technological approach on semiconductor QD VECSELs. Then, from the viewpoint of both single QD nanolaser and cavity quantum electrodynamics (QED), a single-QD-cavity system resulting from the strong coupling of QD cavity is presented. A difference of this review from the other existing works on semiconductor VECSEL devices is that we will cover both the fundamental aspects and technological approaches of QD VECSEL devices. And lastly, the presented review here has provided a deep insight into useful guideline for the development of QD VECSEL technology and future quantum functional nanophotonic devices and monolithic photonic integrated circuits (MPhICs).

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Complete suppression of filamentation and superior beam quality in quantum-dot lasers

Abstract: Articles you may be interested inMBE growth of P-doped 1.3μm InAs quantum dot lasers on silicon J. Vac. Sci. Technol. B 32, 02C108 (2014); 10.1116/1.4864148Effect of the number of quantum dot layers and dual state emission on the performance of InAs/InGaAs passively mode-locked lasers

Cited by 99 publications

References 21 publications

Nonlinear and Nonequilibrium Dynamics of Quantum-Dot Optoelectronic Devices

Nonlinear and Nonequilibrium Dynamics of Quantum-Dot Optoelectronic Devices

Unlocking Spectral Versatility from Broadly−Tunable Quantum−Dot Lasers

Vertical-external-cavity surface-emitting lasers and quantum dot lasers

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