Complex features of the photoluminescence from ZnO nanorods grown by vapor-phase transport method

Jalolov, R.R.; Уролов, Ш.З.; Shaymardanov, Z. Sh.; Kurbanov, S. S.; Rustamova, B.N.

doi:10.1016/j.mssp.2021.105783

Cited by 13 publications

(4 citation statements)

References 19 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…• Region B: the visible luminescence is usually a combination of emissions related to exciton transitions, 25 surface defects, vacancies, and surface morphology. 26 …”

Section: Resultsmentioning

confidence: 99%

“…Excitons bound to dopants, native defects, or complexes produce extrinsic transitions that typically create discrete electronic states in the band gap. Region B: the visible luminescence is usually a combination of emissions related to exciton transitions, 25 surface defects, vacancies, and surface morphology. 26 Region C: the band in this region is centered around 754.5 nm, it is a second order response of the UV band (2l = 2 × 377 = 754 nm).…”

Section: Optical Properties Of Zno Nanowiresmentioning

confidence: 99%

See 1 more Smart Citation

Highly C-oriented (002) plane ZnO nanowires synthesis

Nizar,

Lajnef,

Chaste

et al. 2023

RSC Adv.

View full text Add to dashboard Cite

show abstract

“…• Region B: the visible luminescence is usually a combination of emissions related to exciton transitions, 25 surface defects, vacancies, and surface morphology. 26 …”

Section: Resultsmentioning

confidence: 99%

Section: Optical Properties Of Zno Nanowiresmentioning

confidence: 99%

Highly C-oriented (002) plane ZnO nanowires synthesis

Nizar,

Lajnef,

Chaste

et al. 2023

RSC Adv.

View full text Add to dashboard Cite

show abstract

“…As was theoretically predicted, the (0/−1) transition level for a zinc vacancy lies above the top of the valence band by ~0.45 [12] or ~0.3 eV [13] and the (−1/−2) transition level lies above the top of the valence band by ~0.8 [12] or 0.7 eV [13]. Hence, electron transitions from the conduction band or a shallow donor level to a singly charged acceptor level of a zinc vacancy can provide luminescence with a wavelength of 395 450 nm [14].…”

Section: Resultsmentioning

confidence: 99%

The influence of size on the photoluminescence properties of ZnO nanostructures

Jalolov

Rustamova

Уролов

et al. 2021

УФЖ

Self Cite

View full text Add to dashboard Cite

This paper describes methods for synthesizing different nanostructures of ZnO in aqueous solutions at low temperatures and examines the effect of the size of the synthesized samples on the photoluminescence (PL) spectra. As the diameters of the nanostructures increased, a decrease in the ratio of the intensity of the ultraviolet radiation band to the intensity of the yellow radiation band in the PL spectrum observed. It is found that changing the diameters of nanostructures from 15 nm to 1000 nm leads to a decrease in their bandgap energy (Eg) from 3.28 to 3.21 eV. When the diameters of the nanostructures were less than ~400 nm, it was found that the energy of the band gap was strongly depend on the size of the nanostructure, and that the bond was weaker as the size of the nanostructures exceeded 400 nm.

show abstract

“…The formation of defects on the surface of crystals when exposed to atomic particles has always been of interest to researchers due to the widespread use of these materials in surface engineering, 1–3 optoelectronics, 4–9 photovoltaics 10–13 space materials science, 14,15 and other fields of science and technology 8,16–20 . Today, high‐tech materials, in contrast to bulk materials, have special surface properties with special performance characteristics 21,22 .…”

Section: Introductionmentioning

confidence: 99%

Influence of the irradiation of ions of different mass on the formation of surface defects of lithium fluoride thin films

Sharopov

Kaur

Kurbanov

et al. 2022

Surface & Interface Analysis

View full text Add to dashboard Cite

We explore the experimental and simulation results of the formation of defects on the surface of lithium fluoride thin films under irradiation with different mass ions using total current (TC) spectroscopy, secondary ion mass spectroscopy (SIMS), and the Stopping and Range of Ions in Matter (SRIM) software package. A comparative study was carried out with ions of different masses, and inconsistencies in the occurring physical phenomena between our early concepts were found. It is shown that in the case of heavy ions irradiation, they are implanted and appear as substitutional atoms into the bulk of the crystal. For ions with the smallest ion mass, the distribution of interstitial defects is greater on the surface than in the bulk of the crystal. An attempt is made to explain the formation of some defects on the surface (formed peaks in the TC spectra) by the method of computer simulation.

show abstract

Complex features of the photoluminescence from ZnO nanorods grown by vapor-phase transport method

Cited by 13 publications

References 19 publications

Highly C-oriented (002) plane ZnO nanowires synthesis

Highly C-oriented (002) plane ZnO nanowires synthesis

The influence of size on the photoluminescence properties of ZnO nanostructures

Influence of the irradiation of ions of different mass on the formation of surface defects of lithium fluoride thin films

Contact Info

Product

Resources

About