Complex oxide nanostructures by pulsed laser deposition through nanostencils

Cojocaru, C. V.; Harnagea, Cătălin; Rosei, Federico; Pignolet, A.; Boogaart, M A F van den; Brugger, Jürgen

doi:10.1063/1.1923764

Cited by 61 publications

(40 citation statements)

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“…The possibility of controlling the growth of nanoscale BFCO structures through a nanostensils also represents an exciting perspective for the future work. 17,18 …”

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confidence: 99%

EFFECT OF EPITAXIAL STRAIN ON THE STRUCTURAL AND FERROELECTRIC PROPERTIES OF Bi₂FeCrO₆ THIN FILMS

Nechache

Harnagea

Ruediger

et al. 2010

Funct. Mater. Lett.

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Bi 2 FeCrO 6 thin films were epitaxially grown by pulsed laser deposition on (100)-oriented LaAlO 3 , (LaAlO 3 ) 0.3 (Sr 2 LaTaO 6 ) 0.7 and SrTiO 3 single crystalline substrates with and without epitaxial CaRuO 3 buffered layer. The in-plane compressive strain induces monoclinic distortion of the Bi 2 FeCrO 6 lattice cell. The strain originates from lattice mismatch between CaRuO 3 and single crystal substrates. The similar crystal structure of the substrate and the layer lead to coherent epitaxial growth of the heterostructures and avoid strain relaxation in particular for BFCO films deposited on LaAlO 3 substrates. The ferroelectric character is demonstrated for all grown BFCO films. The residual in-plane strain weakly affects the effective piezoelectric coefficient of BFCO layers.Keywords: Pulsed laser deposition (PLD); perovskite thin films; complex oxides; epitaxy; piezoresponse (PFM); crystal structure; cation ordering; double perovskite.An important area of research in recent years has been to understand exactly why the properties of epitaxial films differ from related bulk materials, and to learn how to use these differences to engineer desirable properties. Effects due to strain in the films are often thought of as analogous to those of high pressure experiments in bulk. The main differences are (i) the stress in the films is typically biaxial rather than hydrostatic or uniaxial, (ii) films can have much larger strains than is usually achievable in pressure cells, and (iii) films are easier to work with for many experiments and applications. Ferroelectricity in strained perovskite films has been a particularly noteworthy topic of study. Recent experiments have shown strain-induced ferroelectricity in SrTiO 3 (STO) films, and huge changes in the ferroelectric transition temperature T C in both STO and BaTiO 3 (BTO) films under strain. 1,2 Other notable results include large changes in the metal-insulator transition temperature of NdNiO 3 films under strain 3 and reports of increasing the transition temperature of La 2−x SrCuO 4 under compressive strain. [4][5][6] In this letter, we present a systematic investigation of structural and ferroelectric properties in epitaxial Bi 2 FeCrO 6 (BFCO) films with varying degree of compressive strain by using several commercially available single crystal substrates. * Corresponding author.X-ray diffraction (XRD) patterns collected on polycrystalline BFCO film (400 nm) deposited on amorphous SiO 2 (100 nm) on Silicon (100) by laser ablation were fitted with a rhombohedral R3 unit cell similar to that previously reported for BiFeO 3 (BFO). 7 The rhombohedral lattice parameter of this BFCO film is found to be around 5.56 Å which corresponds to a pseudo-cubic lattice parameter of ∼ 3.93 Å. Recently, Suchomel et al. reported the synthesis of high pressure BFCO bulk. 8 They claimed that BFCO bulk has a hexagonal R3c unit cell and the refined lattice parameters, obtained from the high resolution synchrotron XRD data are a = 5.5454 Å and c = 13.6952 Å. These values of latti...

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“…The possibility of controlling the growth of nanoscale BFCO structures through a nanostensils also represents an exciting perspective for the future work. 17,18 …”

mentioning

confidence: 99%

EFFECT OF EPITAXIAL STRAIN ON THE STRUCTURAL AND FERROELECTRIC PROPERTIES OF Bi₂FeCrO₆ THIN FILMS

Nechache

Harnagea

Ruediger

et al. 2010

Funct. Mater. Lett.

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“…Materials selection indicates the use of a material with a high dielectric constant, such as BaTiO 3 or (Ba, Sr)TiO 3 . The approach is an alternative to other forms of thin film fabrication procedures such as pulsed laser deposition, metalorganic chemical vapor deposition (MOCVD), sputtering or conventional sol-gel processing that still may exhibit their own limitations, such as high temperature processing steps necessary for product crystallization (>500 • C) and/or ultrahigh vacuum (UHV) instrumentation [30][31][32][33][34][35].…”

Section: Introductionmentioning

confidence: 99%

Structure and performance of dielectric films based on self-assembled nanocrystals with a high dielectric constant

et al. 2013

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Due to a typesetting error, an incorrect version of scheme 1 was published in this paper. Please see the corrected scheme 1. Abstract Self-assembled films built from nanoparticles with a high dielectric constant are attractive as a foundation for new dielectric media with increased efficiency and range of operation, due to the ability to exploit nanofabrication techniques and emergent electrical properties originating from the nanoscale. However, because the building block is a discrete one-dimensional unit, it becomes a challenge to capture potential enhancements in dielectric performance in two or three dimensions, frequently due to surface effects or the presence of discontinuities. This is a recurring theme in nanoparticle film technology when applied to the realm of thin film semiconductor and device electronics. We present the use of chemically synthesized (Ba, Sr)TiO 3 nanocrystals, and a novel deposition-polymerization technique, as a means to fabricate the dielectric layer. The effective dielectric constant of the film is tunable according to nanoparticle size, and effective film dielectric constants of up to 34 are enabled. Wide area and multilayer dielectrics of up to 8 cm 2 and 190 nF are reported, for which the building block is an 8 nm nanocrystal. We describe models for assessing dielectric performance, and distinct methods for improving the dielectric constant of a nanocrystal thin film. The approach relies on evaporatively driven assembly of perovskite nanocrystals with uniform size distributions in a tunable 7-30 nm size range, coupled with the use of low molecular weight monomer/polymer precursor chemistry that can infiltrate the porous nanocrystal thin film network post assembly. The intercrystal void space (low k dielectric volume fraction) is minimized, while simultaneously promoting intercrystal connectivity and maximizing volume fraction of the high k dielectric component. Furfuryl alcohol, which has good affinity to the surface of (Ba, Sr)

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“…The nan uniformly throughout sieve areas (1mm × 0.1 mm) [6]. Figure 3a micron size) stru into the ferroelectric phase, as demonstrated by piezoresponse force microscopy.…”

Section: Barium Titanate Structuresmentioning

confidence: 99%

Ferroelectric mesoscopic structures by room-temperature PLD

Harnagea

Cojocaru

Gautreau

et al. 2007

J. Phys.: Conf. Ser.

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Abstract. Usually ferroelectric thin films are deposited by pulsed laser deposition (PLD) at elevated substrate temperatures, in order to obtain a good crystalline quality. Here we report the fabrication of ferroelectric BaTiO 3 and BiFeO 3 structures by room-temperature PLD combined with post-deposition annealing, and their ferroelectric characterization. A method to control the position of the deposited structures is also presented. IntroductionPulsed Laser Deposition (PLD) is a versatile deposition technique widely used to prepare various complex oxide materials. In particular, ferroelectric materials, which are promising functional materials for applications in pyroelectric sensors, MEMS and various electronic devices, have been grown by PLD in order to study their properties in the thin film or structured form. The establishment of the optimal deposition parameters that results in films with highest crystallographic quality and best electrical properties is still a challenging task and a semi-empirical process. Among the deposition parameters, the optimal substrate temperature usually falls in a narrow window and was found to be difficult to establish but of crucial importance, because it governs both the nucleation and the growth of the deposited film.Here we report the fabrication of ferroelectric mesostructures by PLD at room temperature, thus eliminating the need to determine this difficult-to-control growth parameter. We have succeeded in growing mesoscopic BaTiO 3 and BiFeO 3 ferroelectric structures (30 nm to 3000 nm in lateral size) with good properties by combining room temperature PLD with a post-deposition annealing at high temperature (800 -900°C).

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Complex oxide nanostructures by pulsed laser deposition through nanostencils

Cited by 61 publications

References 20 publications

EFFECT OF EPITAXIAL STRAIN ON THE STRUCTURAL AND FERROELECTRIC PROPERTIES OF Bi₂FeCrO₆ THIN FILMS

EFFECT OF EPITAXIAL STRAIN ON THE STRUCTURAL AND FERROELECTRIC PROPERTIES OF Bi₂FeCrO₆ THIN FILMS

Structure and performance of dielectric films based on self-assembled nanocrystals with a high dielectric constant

Ferroelectric mesoscopic structures by room-temperature PLD

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Complex oxide nanostructures by pulsed laser deposition through nanostencils

Cited by 61 publications

References 20 publications

EFFECT OF EPITAXIAL STRAIN ON THE STRUCTURAL AND FERROELECTRIC PROPERTIES OF Bi2FeCrO6 THIN FILMS

EFFECT OF EPITAXIAL STRAIN ON THE STRUCTURAL AND FERROELECTRIC PROPERTIES OF Bi2FeCrO6 THIN FILMS

Structure and performance of dielectric films based on self-assembled nanocrystals with a high dielectric constant

Ferroelectric mesoscopic structures by room-temperature PLD

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EFFECT OF EPITAXIAL STRAIN ON THE STRUCTURAL AND FERROELECTRIC PROPERTIES OF Bi₂FeCrO₆ THIN FILMS

EFFECT OF EPITAXIAL STRAIN ON THE STRUCTURAL AND FERROELECTRIC PROPERTIES OF Bi₂FeCrO₆ THIN FILMS