Complex permittivity measurements of extremely low loss dielectric materials using whispering gallery modes

Křupka, J.; Derzakowski, K.; Abramowicz, Adam; Geyer, Richard G.

doi:10.1109/mwsym.1997.596578

Cited by 26 publications

(13 citation statements)

References 5 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…This method has been shown to be extremely useful when measuring low loss materials such as sapphire. 13 Our measurements agree with the measurements in Ref. 8 only above 40 K. Below this temperature we have measured a loss tangent of up to five times smaller.…”

Section: Introductionsupporting

confidence: 91%

Anisotropic complex permittivity measurements of mono-crystalline rutile between 10 and 300 K

Tobar

Křupka

Ivanov

et al. 1998

Journal of Applied Physics

124

View full text Add to dashboard Cite

Articles you may be interested inMicrowave complex permittivity of voltage-tunable nematic liquid crystals measured in high resistivity silicon transducers Appl. Phys. Lett. 102, 102904 (2013); 10.1063/1.4795534 Microwave properties of semi-insulating silicon carbide between 10 and 40 GHz and at cryogenic temperaturesThe dielectric properties of a single crystal rutile (TiO 2 ) resonator have been measured using whispering gallery modes. Q factors and resonant frequencies were measured from 300 to 10 K. Q factors as high as 10 4 , 10 5 , and 10 7 were obtained at 300, 80, and 10 K, respectively. Using the whispering gallery mode technique we have determined accurately the loss tangent and dielectric constant of monocrystalline rutile and obtained much more sensitive measurements than previously reported. We show that rutile exhibits anisotropy in both the loss tangent and permittivity over the range from 10 to 300 K.

show abstract

Section: Introductionsupporting

confidence: 91%

Anisotropic complex permittivity measurements of mono-crystalline rutile between 10 and 300 K

Tobar

Křupka

Ivanov

et al. 1998

Journal of Applied Physics

124

View full text Add to dashboard Cite

show abstract

“…In fact, only a few publications have been directly dedicated to dielectric-anisotropy measurements. Whispering-gallery modes in single dielectric resonators could be used for accurate anisotropy measurement of extremely lowloss materials (Krupka et al, 1994(Krupka et al, , 1997). An early split-cavity method for the dielectricconstant anisotropy determination through a long cylindrical cavity with TE 111 and TM nm0 modes is described by Olyphant, 1979, and data for some reinforced materials are presented.…”

Section: Characterization Of the Substrate Dielectric Parameters And mentioning

confidence: 99%

Dielectric Anisotropy of Modern Microwave Substrates

Dankov¹

2010

Microwave and Millimeter Wave Technologies From Photonic Bandgap Devices to Antenna and Applications

View full text Add to dashboard Cite

“…[10,11,12] Very low-loss single-crystal materials including sapphire, ruby, Titanium doped sapphire, YAG, Chromium doped YAG, Calcium, Magnesium and Barium Fluoride, quartz, and others have been measured this way. [13,14,15,16,17,18,19,20,21,22] The WGM technique has also been used to characterize the complex permittivity of semiconductors, including bulk monocrystalline Silicon, [23] Gallium Arsenide (GaAs) and Gallium Phosphide (GaP), [24,25] at microwave frequencies from cryogenic temperatures to room temperature.…”

Section: Measurement Techniquementioning

confidence: 99%

Observation of persistent photoconductivity in bulk gallium arsenide and gallium phosphide samples at cryogenic temperatures using the whispering gallery mode method

Hartnett

Mouneyrac

Floch

et al. 2008

Journal of Applied Physics

View full text Add to dashboard Cite

Whispering Gallery modes in bulk cylindrical Gallium Arsenide and Gallium Phosphide samples have been examined both in darkness and under white light at cryogenics temperatures ≤ 50 K.In both cases persistent photoconductivity was observed after initially exposing semiconductors to white light from a halogen lamp. Photoconductance decay time constants for GaP and GaAs were determined to be 0.900 ± 0.081 ns and 1.098 ± 0.063 ns, respectively, using this method.

show abstract

Complex permittivity measurements of extremely low loss dielectric materials using whispering gallery modes

Cited by 26 publications

References 5 publications

Anisotropic complex permittivity measurements of mono-crystalline rutile between 10 and 300 K

Anisotropic complex permittivity measurements of mono-crystalline rutile between 10 and 300 K

Dielectric Anisotropy of Modern Microwave Substrates

Observation of persistent photoconductivity in bulk gallium arsenide and gallium phosphide samples at cryogenic temperatures using the whispering gallery mode method

Contact Info

Product

Resources

About