Complexing agent-assisted highly dense CuInSe2 thin films prepared by one-step electrochemical deposition

Woo, Wan Jong; Jeong, Soon Cheol; Jung, Seung‐Boo; Lee, Hyun Jong; Cha, Ji−Hyun

doi:10.1016/j.jelechem.2017.12.004

Cited by 7 publications

(1 citation statement)

References 22 publications

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“…The crystallographic plane (112) is the prominent diffraction plane, indicating that the single crystal growth has occurred along the (112) direction [21][22].The lattice parameter was calculated to be 5.77 and 11.74 A˚ which is directly related to the anion position displacement in chalcopyrites was found to be near to 1 (The tetragonal deformation parameter η = c/2a) [23,24] confirming CuInSe 2 phase.. The size of the crystallites D in the grains can be estimated by the Debye-Scherrer formula [20]:…”

Section: Structural Propertiesmentioning

confidence: 97%

FABRICATION AND CHARACTERIZATION OF CuInSe2 THIN FILM SOLAR CELLS WITH FLUORINE DOPED ZnO AS NEW BUFFER LAYER

GHEZAL¹,

BELAL²,

ZAIR³

2020

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Copper indium diselenide CuInSe2 (CISe) thin films are very important semiconductor material for solar cell applications.In this study, CuInSe2 (CIS), and Fluorine doped ZnO (ZnO:F) thin films were electrodeposited from aqueous solutions consisting of CuCl2, InCl3,and SeO2 with Na-citrate as complexing agents onto Fluorine doped tin oxide (FTO) substrates for CuInSe2,and ZnCl2,NH4F were used as sources of ZnO and fluorine doping respectively. The microstructures, morphologies, and optical properties of the CuInSe2 With new buffer layer fluorine doped ZnO (FZO) were characterized. X-ray diffraction analysis showed that all the films CuInSe2 are tetragonal chalcopyrite with favored orientation along (112) direction and Cu:In:Se crystals are nearly 1:1:2 atomic ratio. The surface morphology of all layers were void free, compact and fairly uniform. The near stoichiometries CuInSe2 film (annealing at 350°C), has the optica

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