Components of strong magnetoresistance in Mn implanted Ge

Simons, Andrew J.; Gerber, A.; Korenblit, I. Ya.; Суслов, А. В.; Raquet, B.; Passacantando, M.; Ottaviano, L.; Impellizzeri, G.; Аронзон, Б. А.

doi:10.1063/1.4867623

Cited by 3 publications

(5 citation statements)

References 39 publications

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“…This result is consisted with that reported by Simons et al. 11 It is well known that nonlinear Hall effect, derived from two-type carriers, should be attributed to OHE in nature and different from AHE. It can be seen from Fig.…”

Section: R0supporting

confidence: 91%

“…[1][2][3] But the nonlinearity of Hall resistance versus external magnetic fields has been found and studied in some nonmagnetic films, [4][5][6][7][8] especially in some heterojunctions. [9][10][11][12][13][14][15] There are two kinds of sights about nonlinear Hall effect in heterojunctions. The first viewpoint attributed the nonlinear Hall effect to the OHE, which held two types of carriers with different densities and/or mobility participated in the magnetotransport, such as in GeMn/Ge and Bi 2 Se 3 /YIG heterojunctions.…”

Section: Introductionmentioning

confidence: 99%

“…The first viewpoint attributed the nonlinear Hall effect to the OHE, which held two types of carriers with different densities and/or mobility participated in the magnetotransport, such as in GeMn/Ge and Bi 2 Se 3 /YIG heterojunctions. [10][11][12] However, this model overlooked the influence of interfacial potential barrier on the magnetotransport in heterojunctions. The second viewpoint attributed the nonlinearity to the AHE originated from the interfacial Rashba spin-orbit coupling due to the structure inversion asymmetry in the heterojunctions, such as in Mn x Si 1−x /Si heterojunctions, 13 which ignored the electrical transport affects of double conductance layers.…”

Section: Introductionmentioning

confidence: 99%

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Large nonlinear Hall effect in (FeCo)0.67Ge0.33/Ge heterojunctions

Pei

Xiao

et al. 2019

Int. J. Mod. Phys. B

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The large nonlinear Hall effect was found in (FeCo)[Formula: see text]Ge[Formula: see text]/Ge heterojunctions formed by sputtering amorphous [Formula: see text]-type (FeCo)[Formula: see text]Ge[Formula: see text] magnetic semiconductor films on near intrinsic n-type Ge substrate. It is very interesting that the mechanisms of the large nonlinear Hall effect in (FeCo)[Formula: see text]Ge[Formula: see text]/Ge heterojunctions are different at different temperature ranges. Below 10 K, the Hall resistance of (FeCo)[Formula: see text]Ge[Formula: see text]/Ge heterojunctions is almost the same as the anomalous Hall effect of (FeCo)[Formula: see text]Ge[Formula: see text] ferromagnetic films. While the temperature increased from 10 to 60 K, the nonlinear Hall resistance, longitudinal conductance, and magnetoresistance all increased quickly and reached the maximum at T[Formula: see text]=[Formula: see text]60 K. In this case, thermally excited conducting carriers can tunnel through the interfacial potential barrier in (FeCo)[Formula: see text]Ge[Formula: see text]/Ge heterojunctions. Thus, in the range of 10–60 K, the enhanced nonlinear Hall resistance can be attributed to the anomalous Hall effect which was further enhanced by interfacial Rashba spin–orbit coupling effect. When the temperature further increased from 60 to 250 K, the interfacial potential barrier weakened gradually, and the Hall resistance and magnetoresistance decreased due to the shunting of the Ge substrate. In this case, the nonlinear Hall effect of (FeCo)[Formula: see text]Ge[Formula: see text]/Ge heterojunctions can be explained very well by the two-band model of nonlinear Hall effect.

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Section: R0supporting

confidence: 91%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Large nonlinear Hall effect in (FeCo)0.67Ge0.33/Ge heterojunctions

Pei

Xiao

et al. 2019

Int. J. Mod. Phys. B

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“…The GaAs substrate we used was not conducting when tested by itself, and the sufficiently oxidized films were not conducting as well. We therefore excluded the possibility of current leakage and parallel conductance along the films and the substrate [13]. Magnetic characterization of the samples was done using SQUID magnetometer.…”

Section: Methodsmentioning

confidence: 99%

Scaling of the Hall effects beyond the quantum resistance threshold in oxidized CoFeB

Gerber¹,

Kopnov²

2017

Phys. Rev. B

Self Cite

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The ordinary and the extraordinary Hall effects were studied in gradually oxidized amorphous CoFeB ferromagnets over six orders of resistivity from the metallic to the strongly insulating regime. Polarity of the extraordinary Hall effect reverses, and the amplitude of both the ordinary and the extraordinary Hall effects increases quadratically with resistivity when resistance exceeds the quantum resistance threshold ℎ 2 2 ⁄ . The absolute value of the extraordinary Hall effect scales linearly with the ordinary one in the entire range over eight orders of magnitude between the metallic and the insulating states. The behavior differs qualitatively and quantitatively from theoretically predicted and experimentally known in other materials. PACS: 73.50.-h; 75.76.+j; 75.50.Kj 2 Introduction.Hall effect is the major source of information on a type and density of charge carriers.Regretfully, our knowledge of the phenomenon in strongly disordered conductors is quite poor as experimental data are scarce and sometimes controversial. The reason is essentially technical: for any practical arrangement of electric contacts, there is an unavoidable geometrical mismatch in positioning of transverse to current (Hall) probes.Since longitudinal electric field is usually much larger than the transverse one, a relatively small Hall signal is hidden on a background of the longitudinal resistance noise. Thus, practically no data are available on the insulating side of the metalinsulator transition for resistivity exceeding 0.1 -1 Ωcm. Absence of data does not reflect an absence of interest, as a number of puzzling phenomena, like an existence of the Hall insulator state [1-3], double reversal of Hall effect polarity [4, 5] and the giant Hall effect [6] were pointed out but remained unresolved. Availability of the extraordinary Hall effect (EHE) data in ferromagnetic systems is somewhat better, sincethe effect is usually much larger than the ordinary Hall effect and is easier to measure.An impression has been created that recent theoretical models [7 -10] provide

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“…The linear in field dependence of the longitudinal resistance is very often invoked as evidence for exotic quasiparticles in new materials. On the other hand linear magnetoresistance has been measured in "simple" semiconducting samples like Mn implanted Ge [48] or in 2D electron gas in an ultrahigh mobility GaAs quantum well [49]. Experimental evidence suggests that its origin can be an admixture of a component of the Hall resistivity to the longitudinal resistance related to density fluctuations, which exist in nearly every sample, especially when the carrier density is low [49].…”

Section: Summary Of Samples Dimensions and Preparation Details Of The...mentioning

confidence: 99%

Nonintrinsic origin of the magnetic-field-induced metal-insulator and electronic phase transitions in graphite

Barzola-Quiquia,

Esquinazi,

Precker

et al. 2019

Preprint

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A detailed magnetoresistance study of bulk and microflake samples of highly oriented pyrolytic graphite with a thickness of 25 µm to 23 nm reveals that the usually observed field-induced metalinsulator and electronic phase transitions vanish in thinner samples. The observed suppression is accompanied by orders of magnitude decrease of the magnetoresistance and of the amplitude of the Shubnikov-de-Haas oscillations. The overall behavior is related to the decrease in the quantity of two-dimensional interfaces between crystalline regions of the same and different stacking orders present in graphite samples. Our results indicate that these field-induced transitions are not intrinsic to the ideal graphite structure and, therefore, a relevant portion of the published interpretations should be reconsidered.

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Components of strong magnetoresistance in Mn implanted Ge

Cited by 3 publications

References 39 publications

Large nonlinear Hall effect in (FeCo)0.67Ge0.33/Ge heterojunctions

Large nonlinear Hall effect in (FeCo)0.67Ge0.33/Ge heterojunctions

Scaling of the Hall effects beyond the quantum resistance threshold in oxidized CoFeB

Nonintrinsic origin of the magnetic-field-induced metal-insulator and electronic phase transitions in graphite

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