High-index III–V
semiconductor nanoantennas have gained
great attention for enhanced nonlinear light–matter interactions,
in the past few years. However, the complexity of nonlinear emission
profiles imposes severe constraints on practical applications, such
as in optical communications and integrated optoelectronic devices.
These complexities include the lack of unidirectional nonlinear emission
and the severe challenges in switching between forward and backward
emissions, due to the structure of the susceptibility tensor of the
III–V nanoantennas. Here, we propose a solution to both issues
via engineering the nonlinear tensor of the nanoantennas. The special
nonlinear tensorial properties of zinc-blende material can be used
to engineer the nonlinear characteristics via growing the nanoantennas
along different crystalline orientations. Based on the nonlinear multipolar
effect, we have designed and fabricated (110)-grown GaAs nanoantennas,
with engineered tensorial properties, embedded in a transparent low-index
material. Our technique provides an approach not only for unidirectional
second-harmonic generation (SHG) forward or backward emission but
also for switching from one to another. Importantly, switching the
SHG emission directionality is obtained only by rotating the polarization
of the incident light, without the need for physical variation of
the antennas or the environment. This characteristic is an advantage,
as compared to other nonlinear nanoantennas, including (100)- and
(111)-grown III–V counterparts or silicon and germanium nanoantennas.
Indeed, (110)-GaAs nanoantennas allow for engineering the nonlinear
nanophotonic systems including nonlinear “Huygens metasurfaces”
and offer exciting opportunities for various nonlinear nanophotonics
technologies, such as nanoscale light routing and light sources, as
well as multifunctional flat optical elements.