2024
DOI: 10.1088/2631-8695/ad2efa
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Composite channel 100 nm InP HEMT with ultrathin barrier for millimetre wave applications

Soumak Nandi,
Shashank Kumar Dubey,
Mukesh Kumar
et al.

Abstract: This work proposes a new 100 nm InP based InGaAs-InAs-InGaAs composite channel HEMT for millimetre wave applications. The usage of an ultra-thin 2 nm barrier layer, unique composite channel topology and III-V material selection provides superior electron confinement in the channel, enhancing 2DEG concentration and hence, mobility and speed of the proposed device. We achieve a unity current gain frequency (fT) of 248.9 GHz and a maximum oscillation frequency (fMAX) of 523.9 GHz with a current gain of 67.7 dB at… Show more

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