2010 Solid-State, Actuators, and Microsystems Workshop Technical Digest 2010
DOI: 10.31438/trf.hh2010.2
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Composite Polysilicon-Platinum Lateral Nanoelectromechanical Relays

Abstract: This paper reports the fabrication and performance of laterally actuated, polysilicon-platinum composite nanoelectromechanical (NEM) relays. Laterally actuated relays are defined in a single lithography step, enabling symmetric electrode and beam structures. The platinum coating serves as the conducting contact material and can also provide a local routing layer. Decoupling mechanical and electrical properties of the NEM relay allows independent optimization of each property. The NEM relays exhibited less than… Show more

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Cited by 14 publications
(18 citation statements)
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“…This forms an ohmic contact that permits current to flow from the source to the drain. A wide range of contact resistances have been reported, ranging from 83 with gold contacts [Fruehling et al 2009], to several thousand with contact materials such as platinum [Parsa et al 2010] or aluminum oxide [Jeon et al 2010]. The primary reason for this wide range is that most prototypes are designed for NEMS-based digital logic, where the high mechanical delay completely dominates the electrical delay (and a high resistance is beneficial by limiting the current draw).…”
Section: Cmos-compatible Nems Switchesmentioning
confidence: 97%
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“…This forms an ohmic contact that permits current to flow from the source to the drain. A wide range of contact resistances have been reported, ranging from 83 with gold contacts [Fruehling et al 2009], to several thousand with contact materials such as platinum [Parsa et al 2010] or aluminum oxide [Jeon et al 2010]. The primary reason for this wide range is that most prototypes are designed for NEMS-based digital logic, where the high mechanical delay completely dominates the electrical delay (and a high resistance is beneficial by limiting the current draw).…”
Section: Cmos-compatible Nems Switchesmentioning
confidence: 97%
“…Finally, the sacrificial layer is removed leaving an air-gap above which the beam is suspended. Detailed fabrication steps of NEMS switches using standalone MEMS/NEMS processes can be found in Czaplewski et al [2009], Dadgour et al [2010], Parsa et al [2010], and Nathanael et al [2009]. Additionally, a CMOS-NEMS hybrid manufacturing flow is proposed in Dadgour and Banerjee [2007] that requires the addition of only three process steps to the standard CMOS process flow.…”
Section: Cmos-compatible Nems Switchesmentioning
confidence: 99%
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