Composition-adjustable silicon-germanium alloy films based on porous silicon matrices

Grevtsov, Nikita; Chubenko, Eugene; Bondarenko, Vitaly; Gavrilin, Ilya; Dronov, Alexey; Gavrilov, Sergey; Rymski, Grigory; Yanushkevich, Kazimir; Goroshko, Dmitry; Argunov, Efim

doi:10.1016/j.mtcomm.2023.107886

Cited by 4 publications

(2 citation statements)

References 34 publications

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“…It is important to note that the resulting alloy's composition directly corresponds to the ratio of silicon and germanium in the initial composite, which in turn is directly tied to the porosity value dictated by the anodization regimes. Similarly, the alloy's thickness corresponds to that of the initial PS layer, but is reduced slightly due to the presence of unfilled gaps [9].…”

Section: Ps/ge Composites and Sixge1-x Alloysmentioning

confidence: 99%

“…Recently, very attractive results on deposition of germanium into PS were also demonstrated [8]. We discovered that PS filled with Ge can be converted into Si1-xGex alloy films with the use of hightemperature processing [9]. The thickness and composition of silicon-germanium alloys fabricated using this method are determined by the thickness and porosity of the original PS layers employed for their preparation.…”

Section: Introductionmentioning

confidence: 99%

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27‐1: Invited Paper: Nanocomposites and Alloys Based on Porous Silicon Filled with Metals and Semiconductors

Grevtsov,

Lopato,

Dolgyi

et al. 2024

Symp Digest of Tech Papers

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A variety of micro‐ and nanocomposite materials based on electrochemically‐acquired porous silicon are produced and evaluated in terms of their applicability to display technology. It is shown that porous silicon provides a versatile and well‐adjustable template for filling with other materials, which can outright change its electrophysical parameters. While, in terms of display applications, porous silicon layers are mostly prominent for their photohiminescence not akin to monocrystalline silicon, this property can be additionally enhanced by employing a variety of electrochemical techniques to form metal deposits of certain shapes.

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Section: Ps/ge Composites and Sixge1-x Alloysmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

27‐1: Invited Paper: Nanocomposites and Alloys Based on Porous Silicon Filled with Metals and Semiconductors

Grevtsov,

Lopato,

Dolgyi

et al. 2024

Symp Digest of Tech Papers

Self Cite

View full text Add to dashboard Cite

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Thermoelectric materials based on cobalt-containing sintered silicon-germanium alloys

Grevtsov,

Chubenko,

Bondarenko

et al. 2025

Materials Research Bulletin

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Perspective Optical and Electronic Interconnects of Integrated Circuit Elements

Lazarouk,

Bondarenko,

Borisenko

et al. 2024

Doklady Belorusskogo gosudarstvennogo universiteta informatiki

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The recent results of the investigations performed in the research units of the Department of Micro- and Nanoelectronics of Belarusian State University of Informatics and Radioelectronics in the ﬁeld of the development of perspective optical and electronic intra-chip and inter-chip interconnections of silicon integrated circuits are summarized. Examples of the use of nanostructured materials for the proposed light sources and detectors (Si) as well as light guides (Al2O3/TiO2) integrated with monocrystalline silicon are presented. The strategy of an application of inter-chip interposers for optical and electronic connections in bulk (2.5D and 3D) packages of integrated circuits was promoted and tested. Novel materials and structures promising for light sources, optically transparent electrical conductors and protectors against microwave electromagnetic radiation are demonstrated.

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Composition-adjustable silicon-germanium alloy films based on porous silicon matrices

Cited by 4 publications

References 34 publications

27‐1: Invited Paper: Nanocomposites and Alloys Based on Porous Silicon Filled with Metals and Semiconductors

27‐1: Invited Paper: Nanocomposites and Alloys Based on Porous Silicon Filled with Metals and Semiconductors

Thermoelectric materials based on cobalt-containing sintered silicon-germanium alloys

Perspective Optical and Electronic Interconnects of Integrated Circuit Elements

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