Composition analysis of SiO2/SiC interfaces by electron spectroscopic measurements using slope-shaped oxide films

Characterization of oxide films on 4H-SiC epitaxial (0001¯) faces by high-energy-resolution photoemission spectroscopy: Comparison between wet and dry oxidation

“…2, the intensity of the peak dramatically increases with a decrease in e , which means that the origin of this peak exists at the sample surface rather than the oxidesemiconductor interface. In addition, in our previous work, 17 we showed that this peak disappears by a prethermal cleaning at 300°C in vacuum. From these facts, this component peak can be assigned to CH x , i.e., surface contamination.…”

“…The thicknesses of the samples used in the PES measurements were measured by a spectroscopic ellipsometer. We have shown that the structures of the interface layers of thick oxide films are different from those of ultrathin oxide films at the initial oxidation stage based on investigations on oxide-4H-SiC interfaces using oxide film with varying thickness ͑so-called slope-shaped oxide films 17 ͒ as well as oxidation time dependence of oxide-6H-SiC interface structures by spectroscopic ellipsometry. 18,19 Therefore, the correlation between PES and electrical measurements can be made only when we use thin oxide films fabricated by etching thick oxide films, and cannot be made using ultrathin oxide films at the initial oxidation stage.…”

Reactions and luminescence in passivated Si nanocrystallites induced by vacuum ultraviolet and soft-x-ray photons

“…Survey spectra indicate that only Si, C, and O are present in the films ͑there may also be some hydrogen, which cannot be directly detected by photoemission spectroscopy͒. We attribute the low binding energy Si2p core line at 103.5 eV in the thick film ͑or 101.8 eV in the thin film͒ to a multicomponent peak consisting of "bulk" Si, and one or more of Si-C, Si-H, and Si 1+ -in which one Si-Si bond has been replaced by a Si-O bond 28 ͑the reported value for the Si2p binding energy in SiC is 0.9 eV above the main line 29 ͒. As mentioned, recent IR studies of silicon nanocrystallites reveal the formation of SiC bonds, 8 so the presence of a component related to Si-C bonding in the low binding-energy peak cannot be ruled out.…”

Al2O3/SiO2 films prepared by electron-beam evaporation as UV antireflection coatings on 4H-SiC

“…A great number of studies on the characterization of thermally grown SiO 2 /SiC interfaces have been carried out by all kinds of measurements [13][14][15][16]. In those studies, Si-suboxides were claimed to exist in the interfaces.…”