Composition and growth of thin anodic oxides formed on InP (100)

Djenizian, Thierry; Sproule, G. I.; Moisa, S.; Landheer, D.; Wu, Xiaohua; Santinacci, Lionel; Schmuki, Patrik; Graham, M. J.

doi:10.1016/s0013-4686(02)00138-x

Cited by 19 publications

(15 citation statements)

References 24 publications

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“…The modifications of peak energy distribution with an oxide layer and their attribution in terms of oxide compositions have been well discussed and documented in the literature. 20,24,[26][27][28][29][30][31] Furthermore, referring to the literature and to the experimental data showing a positive shift of the flatband potential by capacitance measurements and new contributions of P 2p and In 3d peaks positively shifted by XPS analyses, the interface was classically characterized by the formation of a thin oxide with a composition close to InPO 4 . For undoped n-InP, under positive external polarization and under illumination, the formation of InPO 4 -like compound could be also suggested from capacitance measurements and XPS analyses (Fig.…”

Section: Resultsmentioning

confidence: 99%

Photopotential Measurements on Undopedn-InP at Open Circuit Potential According to the Aqueous pH

Meldeje¹,

Gonçalves²,

Simon³

et al. 2018

J. Electrochem. Soc.

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In this work we studied some fundamental concepts of n-InP interfacial properties based on acid-base equilibrium in the dark and also after the surface illumination at open circuit voltage (Voc). The variation of the flatband potential on undoped n-InP semiconductor was investigated according to aqueous pH. This study was complemented by the effect of the illumination at Voc conditions through photopotential measurements. The impact of the surface lighting on acid-base equilibrium was analyzed by in-situ interfacial capacitance measurements in the dark and by ex-situ X-ray photoelectron spectrometry. The fundamental properties of many semiconductor/electrolyte systems were monitored by the flatband potential position (E FB ). 1,2Its position governed the interfacial characteristics and controlled the electrochemical properties. A classical way of measuring the variation of the flatband potential position was to change the pH of the medium. Many semiconductors were actually sensitive to the variation of acid-base equilibrium.3-12 For III-V semiconductors such as binary (GaAs 3,5 or GaP 6,7 ) or ternary 8 compounds, the acid-base equilibrium was complicated by the specific adsorption sites which induced localized charges on the surface. 13 Previous works have shown a quasi Nernstian variation of the flatband potential on n-InP for (100) 14 and (111) faces 13 over the whole pH range in aqueous medium and also in non aqueous medium such as acetonitrile 15 and liquid ammonia. 16Acid-base equilibrium was studied in the dark from interfacial capacitance measurements in the depletion region avoiding faradaic transfer at the interface semiconductor/electrolyte. This included changing the voltage of the semiconductor artificially through the use of a potentiostat. The band bending owing to electron depletion in the semiconductor (SC) changed depending on the voltage. In the depletion region the Boltzmann relation described the distribution of electrons in the space charge region and the electric field was determined by Gauss'law. Poisson's equation could be solved within that region to give the Mott-Schottky equation that links the reverse square of the capacitance (C) to the interfacial polarization (E). 17 Under depletion conditions the flatband potential was actually deduced from C −2 = f(E) straight line which extrapolation gave E FB for a zero value of C −2 . There are other ways to evaluate the flatband potential such as measuring the photopotential at the open circuit voltage (Voc). As a function of radiation intensity the photopotential was the change in the Fermi level due to the promotion of electrons to the conduction band, and it reached theoretically a maximum at the flatband potential. 13,18 In this paper acid-base equilibrium were further discussed on undoped nInP in which the low doping level led to a space charge region strongly different as compared to high doped n-InP. 9,[13][14][15][16]18 This was particularly true in terms of surface electrical field, charge, capacitance, layer of the space charge re...

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Section: Resultsmentioning

confidence: 99%

Photopotential Measurements on Undopedn-InP at Open Circuit Potential According to the Aqueous pH

Meldeje¹,

Gonçalves²,

Simon³

et al. 2018

J. Electrochem. Soc.

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“…For III–V phosphides, in particular for InP, the situation is qualitatively different because of the different oxidation thermodynamics. , In contrast with III–V arsenides, thermodynamically stable indium phosphates with good dielectric properties have been obtained on InP substrates. − However, the interface defect density of such phosphate/InP interfaces was still much higher than desirable for advanced metal–oxide–semiconductor (MOS) devices . Therefore, the removal of the native oxide (phosphate) in situ before the deposition of the dielectric may be considered necessary for InP also.…”

Section: Introductionmentioning

confidence: 99%

Surface Chemistry and Interface Formation during the Atomic Layer Deposition of Alumina from Trimethylaluminum and Water on Indium Phosphide

et al. 2013

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The surface chemistry and the interface formation during the initial stages of the atomic layer deposition (ALD) of Al2O3 from trimethylaluminum (TMA) and H2O on InP(100) were studied by synchrotron radiation photoemission spectroscopy and scanning tunneling microscopy. The effect of the ex situ surface cleaning by either H2SO4 or (NH4)2S was examined. It is shown that the native oxide on the InP surface consisted mainly of indium hydrogen phosphates with a P enrichment at the interface with InP. After a (NH4)2S treatment, S was present on the surface as a sulfide in both surface and subsurface sites. Exposure to TMA led to the formation of a thin AlPO4 layer, irrespective of the surface cleaning. The surface Fermi level of p-type InP was found to be pinned close to midgap after H2SO4 cleaning and moved only slightly further toward the conduction band edge upon TMA exposure, indicating that the AlPO4/InP interface was rather defective. (NH4)2S passivation led to a Fermi level position of p-type InP close to the conduction band edge. Hence, the InP surface was weakly inverted, which can be attributed to surface doping by S donors. TMA exposure was found to remove surface S, which was accompanied by a shift of the Fermi level to midgap, consistent with the removal of (part of) the S donors in combination with a defective AlPO4/InP interface. Further TMA/H2O ALD did not lead to any detectable changes of the AlPO4/InP interface and suggested simple overgrowth with Al2O3.

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“…Refs. [8][9][10]). The anodic oxide layers have exhibited good dielectric properties opening new perspectives for the use of these materials for gate insulation and surface passivation [11][12][13].…”

Section: Introductionmentioning

confidence: 99%

Growth and characterization of thin anodic oxide films on n-InSb(100) formed in aqueous solutions

et al. 2004

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Access and use of this website and the material on it are subject to the Terms and Conditions set forth at Growth and characterization of thin anodic oxide films on n-InSb(100) formed in aqueous solutions Santinacci, L.; Sproule, G. I.; Moisa, S.; Landheer, D.; Wu, X.; Banu, A.; Djenizian, T.; Schmuki, P.; Graham, M. J.http://nparc.cisti-icist.nrc-cnrc.gc.ca/npsi/jsp/nparc_cp.jsp?lang=fr L'accès à ce site Web et l'utilisation de son contenu sont assujettis aux conditions présentées dans le site LISEZ CES CONDITIONS ATTENTIVEMENT AVANT D'UTILISER CE SITE WEB. NRC Publications Record / Notice d'Archives des publications de CNRC:http://nparc.cisti-icist.nrc-cnrc.gc.ca/npsi/ctrl?action=rtdoc&an=12743949&lang=en http://nparc.cisti-icist.nrc-cnrc.gc.ca/npsi/ctrl?action=rtdoc&an=12743949&lang=fr READ THESE TERMS AND CONDITIONS CAREFULLY BEFORE USING THIS WEBSITE.http://nparc.cisti-icist.nrc-cnrc.gc.ca/npsi/jsp/nparc_cp.jsp?lang=en Vous avez des questions? Nous pouvons vous aider. Pour communiquer directement avec un auteur, consultez la première page de la revue dans laquelle son article a été publié afin de trouver ses coordonnées. Si vous n'arrivez pas à les repérer, communiquez avec nous à PublicationsArchive-ArchivesPublications@nrc-cnrc.gc.ca. Questions? Contact the NRC Publications Archive team atPublicationsArchive-ArchivesPublications@nrc-cnrc.gc.ca. If you wish to email the authors directly, please see the first page of the publication for their contact information. NRC Publications Archive Archives des publications du CNRCThis publication could be one of several versions: author's original, accepted manuscript or the publisher's version. / La version de cette publication peut être l'une des suivantes : la version prépublication de l'auteur, la version acceptée du manuscrit ou la version de l'éditeur. For the publisher's version, please access the DOI link below./ Pour consulter la version de l'éditeur, utilisez le lien DOI ci-dessous.http://doi.org/10.1016/j.corsci. 2003.11.003 Corrosion Science, 46, 8, pp. 2067Science, 46, 8, pp. -2079Science, 46, 8, pp. , 2004 Growth and characterization of thin anodic oxide films on n-InSb (1 0 0) AbstractAnodic oxide films were galvanostatically grown on n-InSb(1 0 0) surfaces at various pH in sodium hydroxide (0.1 M NaOH, pH ¼ 13), borate buffer (0.075 M Na 2 B 4 O 7 + 0.3 M H 3 BO 3 , pH ¼ 8.4) and phosphate buffer (0.3 M NH 4 H 2 PO 4 , pH ¼ 4.4). Thickness, composition and morphology of the oxide films were determined by various surface analytical techniques such as Auger electron spectroscopy, X-ray photoelectron spectroscopy, scanning and transmission electron microscopy and atomic force microscopy. The oxides comprise mainly In 2 O 3 and Sb 2 O 3 and the oxide thickness increases with pH. Electrical properties of oxides indicate that the films may be useful as insulators in some device applications.

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Composition and growth of thin anodic oxides formed on InP (100)

Cited by 19 publications

References 24 publications

Photopotential Measurements on Undopedn-InP at Open Circuit Potential According to the Aqueous pH

Photopotential Measurements on Undopedn-InP at Open Circuit Potential According to the Aqueous pH

Surface Chemistry and Interface Formation during the Atomic Layer Deposition of Alumina from Trimethylaluminum and Water on Indium Phosphide

Growth and characterization of thin anodic oxide films on n-InSb(100) formed in aqueous solutions

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