Composition and strain in thin Si1−xGex virtual substrates measured by micro-Raman spectroscopy and x-ray diffraction

Perova, T. S.; Wasyluk, Joanna; Lyutovich, K.; Kasper, E.; Oehme, Michael; Rode, Karsten; Waldron, Andrew

doi:10.1063/1.3536508

Cited by 83 publications

(70 citation statements)

References 40 publications

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“…Besides the different information depth probed by XRD and Raman, another reason is given by the fact that Raman results are model dependent and thus strongly rely on the accuracy of theoretically and experimentally derived parameters. 28 In particular, the cubic equation for ω GS lacks in precision since the respective Raman frequency value ω 0 for the relaxed alloy is extrapolated due to missing experimental values for x → 0 (Si rich samples). In contrast, the uncertainties of the elastic constant dependent parameters b Si , b SiGe , and b Ge have a negligible influence at such low strain values.…”

Section: Resultsmentioning

confidence: 99%

Imaging Structure and Composition Homogeneity of 300 mm SiGe Virtual Substrates for Advanced CMOS Applications by Scanning X-ray Diffraction Microscopy

Zoellner

Richard

Chahine

et al. 2015

ACS Appl. Mater. Interfaces

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Advanced semiconductor heterostructures are at the very heart of many modern technologies, including aggressively scaled complementary metal oxide semiconductor transistors for high performance computing and laser diodes for low power solid state lighting applications. The control of structural and compositional homogeneity of these semiconductor heterostructures is the key to success to further develop these state-of-the-art technologies. In this article, we report on the lateral distribution of tilt, composition, and strain across step-graded SiGe strain relaxed buffer layers on 300 mm Si(001) wafers treated with and without chemical−mechanical polishing. By using the advanced synchrotron based scanning X-ray diffraction microscopy technique K-Map together with micro-Raman spectroscopy and Atomic Force Microscopy, we are able to establish a partial correlation between real space morphology and structural properties of the sample resolved at the micrometer scale. In particular, we demonstrate that the lattice plane bending of the commonly observed cross-hatch pattern is caused by dislocations. Our results show a strong local correlation between the strain field and composition distribution, indicating that the adatom surface diffusion during growth is driven by strain field fluctuations induced by the underlying dislocation network. Finally, it is revealed that a superficial chemical−mechanical polishing of crosshatched surfaces does not lead to any significant change of tilt, composition, and strain variation compared to that of as-grown samples.

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Section: Resultsmentioning

confidence: 99%

Imaging Structure and Composition Homogeneity of 300 mm SiGe Virtual Substrates for Advanced CMOS Applications by Scanning X-ray Diffraction Microscopy

Zoellner

Richard

Chahine

et al. 2015

ACS Appl. Mater. Interfaces

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“…The peak position shifts under the presence of strain/stress and isotopic variations. 4,5,9,[27][28][29][30][31] Alloys of Si and Ge (Si 1-x Ge x ) typically show three Raman peaks of Ge-Ge (∼300 cm −1 ), Si-Ge (∼400 cm −1 ) and Si-Si (∼500 cm −1 ). The position and intensity of the three peaks depends on the composition of the alloys.…”

Section: Resultsmentioning

confidence: 99%

“…27,28 For precise analysis, more careful interpretation is needed. Perhaps, additional information from XRD, SIMS, X-SEM and X-TEM results will be very useful, in early stages, for verification of Raman characterization results.…”

Section: Raman Characterization Of Ge(100)/simentioning

confidence: 99%

Characterization of Hetero-Epitaxial Ge Films on Si Using Multiwavelength Micro-Raman Spectroscopy

Yoo¹,

Kang²,

Ueda³

et al. 2014

ECS J. Solid State Sci. Technol.

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To meet various physical property requirements of materials for advanced applications for specific devices, combinations of Si/Ge, Ge/Si, Si 1-x Ge x /Si, are frequently introduced in the device fabrication process. Epitaxy, condensation and annealing processes are commonly used. Since a small variation in composition, strain and crystallinity can result in reduced device performance or failure, the composition, strain and crystallinity must be carefully monitored and controlled throughout the manufacturing process. We have studied the dependence of Ge and Si intermixing on annealing temperature and Raman excitation wavelength. Using multiwavelength Raman spectroscopy, we found Ge and Si intermixing in epitaxially grown Ge(100)/Si(100) after successive thermal anneals. Very strong dependence of signal-to-noise (S/N) ratio measurements on excitation wavelength and film structure was observed. Suitable excitation wavelengths must be chosen to properly characterize Si and Ge-based heteroepitaxial layers based on the thickness, stacking order and composition of epitaxial films having different optical properties at different wavelengths.

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“…In Si/Si 1-x Ge x nanostructures, a correlation between Si-Si, Si-Ge and Ge-Ge Raman peak positions, Ge content x and strain ε has been extensively discussed [19,20,25]. The relative number of chemical bonds comprising the Si-Si, Si-Ge, and Ge-Ge phonon modes are estimated as (1-x) 2 , 2x(1-x), and x 2 , respectively.…”

Section: Strain and Chemical Composition In Si/si 1-x Ge X Nanostructmentioning

confidence: 99%

Inelastic light scattering spectroscopy in Si/SiGe nanostructures: Strain, chemical composition and thermal properties

Tsybeskov

Mala

Wang

et al. 2016

Solid State Communications

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Composition and strain in thin Si1−xGex virtual substrates measured by micro-Raman spectroscopy and x-ray diffraction

Cited by 83 publications

References 40 publications

Imaging Structure and Composition Homogeneity of 300 mm SiGe Virtual Substrates for Advanced CMOS Applications by Scanning X-ray Diffraction Microscopy

Imaging Structure and Composition Homogeneity of 300 mm SiGe Virtual Substrates for Advanced CMOS Applications by Scanning X-ray Diffraction Microscopy

Characterization of Hetero-Epitaxial Ge Films on Si Using Multiwavelength Micro-Raman Spectroscopy

Inelastic light scattering spectroscopy in Si/SiGe nanostructures: Strain, chemical composition and thermal properties

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