Composition dependence of electronic defects in CuGaS2
Damilola Adeleye,
Mohit Sood,
Michele Melchiorre
et al.
Abstract:CuGaS2 films grown by physical vapor deposition were studied by photoluminescence (PL) spectroscopy, using excitation intensity and temperature‐dependent analyses. We observed free and bound exciton recombinations, three donor‐to‐acceptor (DA) transitions, and deep‐level transitions. The DA transitions at ~2.41, 2.398, and ~2.29 eV are attributed to a common donor level ~35 meV and two shallow acceptors at ~75 and ~90 meV and a deeper acceptor at 210 meV above the valence band. This electronic structure is sim… Show more
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