2021
DOI: 10.1016/j.jallcom.2021.161306
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Composition dependent properties of p- and n-type polycrystalline group-IV alloy thin films

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Cited by 10 publications
(13 citation statements)
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“…Figure 3a shows that σ is slightly higher for p-type SiGe than for n-type SiGe, despite n-type SiGe having a higher carrier concentration. This is because p-type SiGe has a higher carrier mobility, which likely can be attributed to several features including higher Ge concentration [40], larger grain size (see Figure 2b), thicker film (hence less interfacial carrier scattering) [41], and lower grain boundary potential than for n-type SiGe [42,43]. For both samples, the σ values are slightly lower than those of the quartz glass substrate samples [35,36], which is consistent with the grain size trend shown in Figure 2b.…”
Section: Resultsmentioning
confidence: 99%
“…Figure 3a shows that σ is slightly higher for p-type SiGe than for n-type SiGe, despite n-type SiGe having a higher carrier concentration. This is because p-type SiGe has a higher carrier mobility, which likely can be attributed to several features including higher Ge concentration [40], larger grain size (see Figure 2b), thicker film (hence less interfacial carrier scattering) [41], and lower grain boundary potential than for n-type SiGe [42,43]. For both samples, the σ values are slightly lower than those of the quartz glass substrate samples [35,36], which is consistent with the grain size trend shown in Figure 2b.…”
Section: Resultsmentioning
confidence: 99%
“…39,40 This behavior is due to the densification effects of the amorphous precursor in SPC. 35,41,42 The grain size decreases at high x (>0.1), likely because the deposition temperature of 150 °C is low for densifying the Ge 1−x Si x precursor. 42 Conversely, with increasing y, the grain size increases and subsequently decreases.…”
Section: ■ Results and Discussionmentioning
confidence: 99%
“…35,42 The samples were loaded into a conventional tube furnace in a N 2 atmosphere and annealed to induce SPC at a T SPC of 450−500 °C for 5 h (Table 1); T SPC was determined based on the crystallization rate of Ge 1−x−y Si x Sn y of each composition. 42 SOG with Ga and P dopants was coated on the surface of polycrystalline Ge 1−x−y Si x Sn y layers and then hardened by annealing at 200 °C for 30 min. Subsequently, the samples were annealed at a T DA of 550−750 °C for 10 h for P and 750−800 °C for 30 min for Ga in an Ar atmosphere to diffuse and activate dopant impurities in Ge 1−x−y Si x Sn y (Table 1); T DA was determined based on the diffusion rate of impurities in Ge and Si.…”
Section: ■ Conclusionmentioning
confidence: 99%
“…The conductivity of polycrystalline silicon is significantly influenced by the potential barrier, since the effective mobility of carriers is figured out by the potential barrier, as shown in Equations (1) and (2) [ 11 , 12 , 13 , 14 , 15 , 16 ]. …”
Section: Discussionmentioning
confidence: 99%