1990
DOI: 10.1063/1.104192
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Composition of phosphorus-nitride film deposited on InP surfaces by a photochemical vapor deposition technique and electrical properties of the interface

Abstract: Low-temperature (100–200 °C) growth of phosphorus nitride (P3N5) on InP surfaces has been successfully developed using a mixture of PCl3 and NH3 gases by a direct photochemical vapor deposition. The films have a resistivity of 1×1014 Ω cm and a breakdown voltage of 1×107 V/cm. The minimum density of interface trap states for the aluminum (Al)-P3N5-InP metal-insulator-semiconductor structure after the in situ processes is about 3.6×1010 cm−2 eV−1 near the midgap of InP. Auger electron spectroscopy and x-ray pho… Show more

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Cited by 27 publications
(6 citation statements)
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“…The binary parent compound of nitridophosphates is P 3 N 5 . It exhibits a high band gap and has already been applied in electronic devices as an insulator material. Consequently, it can be expected that ternary or multinary nitridophosphates will show large band gap values as well. Furthermore, the structural diversity of the already known nitridophosphates is comparable to that of nitridosilicates.…”
Section: Introductionmentioning
confidence: 99%
“…The binary parent compound of nitridophosphates is P 3 N 5 . It exhibits a high band gap and has already been applied in electronic devices as an insulator material. Consequently, it can be expected that ternary or multinary nitridophosphates will show large band gap values as well. Furthermore, the structural diversity of the already known nitridophosphates is comparable to that of nitridosilicates.…”
Section: Introductionmentioning
confidence: 99%
“…However,s imilarly to nitridosilicates, both corner sharing and edge sharing of TN 4 tetrahedra (T = Si, P) can occur.B inary P 3 N 5 as the parentc ompound of phosphorus nitrides has ah igh bandgapa nd has thus been applied in electronic devices, for example, as gate insulator materiali nm etal-insulator semiconductor field-effect transistors (MISFETs). [45][46][47] Accordingly,t ernary andh ighern itridophosphates are expected to exhibit high bandgapv alues as well. They have ar emarkable chemical and thermals tabilitya nd are typicallyt ransparent and colorless.…”
Section: Introductionmentioning
confidence: 99%
“…It is used industrially as af lame retardant, as a" getter" materialf or the elimination of oxygen duringt he production of incandescent andt ungsten halogen lamps, and as agate insulator material in metal insulator semiconductor field-effect transistors (MISFETs). [8][9][10] Vitreous compounds in the system Li-Ca-P-N exhibit remarkabler efractive indicesa nd hardness values. [11,12] Pseudo-binary phosphorus nitrides PON and HPN 2 are mainly used in the field of flame retardation.…”
Section: Introductionmentioning
confidence: 99%