Composition of silicon jointly doped with impurity atoms of gallium and phosphorus

Abstract

In this work, the morphology and composition of the silicon surface are experimentally studied using a scanning electron microscope, X-ray phase analysis, and various peaks in the Raman spectra. The spectral characteristics of silicon doped with impurity atoms of phosphorus and gallium have been studied. It was shown, that in the silicon lattice simultaneously doped with gallium and phosphorus atoms impurity atoms created binary complexes. Experimental determination of the concentration of gallium and phosphorus atoms made it possible to reveal a significant increase in the concentration of gallium, in comparison with its fundamental solubility in silicon. It is shown that a sufficiently large concentration of such elementary cells can lead to a significant change in the electrophysical parameters of silicon, i.e. the possibility of obtaining a new silicon-based material.