Composition-tunable 2D SnSe<sub>2(1−x)</sub>S<sub>2x</sub> alloys towards efficient bandgap engineering and high performance (opto)electronics

Wang, Yan; Huang, Le; Li, Bo; Shang, Jimin; Xia, Congxin; Fan, Chao; Deng, Hui‐Xiong; Wei, Zhongming; Li, Jingbo

doi:10.1039/c6tc03751h

Cited by 84 publications

(86 citation statements)

References 43 publications

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“…We compare our values of E ind and b with those from the literature. For SnSe 2(1− x ) S 2 x alloys synthesized by the solvo‐thermal method, E ind (SnS 2 ) = 2.23 eV, E ind (SnSe 2 ) = 1.29 eV and b = 0.03 eV; for CVT‐grown crystals, E ind (SnS 2 ) = 2.27 eV, E ind (SnSe 2 ) = 1.37 eV and b = 1.1 eV . Differences in the measured values of E ind and b can be caused by the coexistence of different polytype phases and/or stoichiometries, and a deviation of the real composition x from the nominal one.…”

Section: Resultsmentioning

confidence: 99%

“…Although SnS 2 and SnSe 2 have been widely studied, the electronic properties of the SnSe 2(1− x ) S 2 x alloy and their dependence on the layer thickness, alloy composition, temperature, and/or applied strain are presently largely unknown. Furthermore, some of these properties can depend on the specific method of synthesis, which can produce materials with different polytype phases and/or stoichiometry.…”

Section: Introductionmentioning

confidence: 99%

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Van der Waals SnSe₂₍₁₋_x₎S₂_x Alloys: Composition‐Dependent Bowing Coefficient and Electron–Phonon Interaction

Kudrynskyi

Wang

Sutcliffe

et al. 2020

Adv Funct Materials

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The design of advanced functional materials with customized properties often requires the use of an alloy. This approach has been used for decades, but only recently to create van der Waals (vdW) alloys for applications in electronics, optoelectronics, and thermoelectrics. A route to engineering their physical properties is by mixing isoelectronic elements, as done for the SnSe2(1−x)S2x alloy. Here, by experiment and first‐principles modeling, it is shown that the value of x can be adjusted over a wide range, indicating good miscibility of the SnS2 and SnSe2 compounds. The x‐dependence of the indirect bandgap energy from Eind = 1.20 eV for SnSe2 to Eind = 2.14 eV for SnS2, corresponds to a large bowing coefficient b ≈ 1 eV, arising from volume deformation and charge exchange effects due to the different sizes and orbital energies of the S‐ and Se‐atoms. This also causes composition‐dependent phonon energy modes, electron–phonon interaction, and temperature dependence of Eind. The alloys are exfoliable into thin layers with properties that depend on the composition, but only weakly on the layer thickness. This work shows that the electronic and vibrational properties of the SnSe2(1−x)S2x alloy and its thin layers provide a versatile platform for development and exploitation.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Van der Waals SnSe₂₍₁₋_x₎S₂_x Alloys: Composition‐Dependent Bowing Coefficient and Electron–Phonon Interaction

Kudrynskyi

Wang

Sutcliffe

et al. 2020

Adv Funct Materials

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“…Figure 1b,c display optical image and AFM image of one representative BP/ SnSeS device, in which the thickness is 7.5 nm for BP and 14 nm for SnSeS. [35] These peaks were all contained in the spectra of BP/SnSeS overlapped region, indicating the successful formation of BP/SnSeS heterostructure. When Raman spectra are taken from the pristine BP region only, the BP A g 1 (438.5 cm −1 ), B 2g (361.4 cm −1 ), and A g 2 (465.8 cm −1 ) modes are present, which is consistent with previous studies.…”

mentioning

confidence: 94%

Multistate Logic Inverter Based on Black Phosphorus/SnSeS Heterostructure

Luo

et al. 2018

Adv Elect Materials

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Graphene, transition metal-dichalcogenides (TMDs), and black phosphorus (BP) are widely exploited as building blocks for such vdWs heterostructure due to their unique electrical and optical properties. [8][9][10][11][12][13] Among these 2D materials, BP has attracted extensive attention because of its high carrier mobility (up to 1000 cm 2 V −1 s −1 at room temperature), moderate tunable direct bandgap on thickness (from 0.3 eV for bulk to 2.0 eV for monolayer), and intrinsic anisotropy arising from the puckered structure. [14][15][16][17] In the past years, a host of BP-based vdWs heterostructures such as graphene/ BP, TMDs/BP, and h-BN/BP architecture, have been fabricated to explore their electronic and photoelectric properties, which have shown promising applications for fieldeffect transistors (FETs), [18][19][20] photodetectors, [8,21,22] flexible devices, [23] memory device, [24] logic circuits, [25] and so on. In the most studied BP/MoS 2 heterostructure, [11,20,25] diverse diode characteristics, including back forward rectifying diode, Zener diode, and forward rectifying diode, have been obtained by BP thickness modulation. [20] A tunable multivalued logic performance was also realized in such heterostructure, providing a step forward toward the future logic applications. [25] Recently, tin-based dichalcogenide SnSe x S 1−x , [26][27][28][29][30][31][32] a layered semiconductor family with environmental friendly and low cost characteristics, has been explored for nanoelectronic applications. In addition, the wide bandgap ranging from ≈1 to ≈2.1 eV opens the possibility of developing versatile devices by band engineering. In this work, we present a realization of BP/SnSeS heterostructure and explore its carrier transport and logic characteristics for the first time. The heterostructure based on Te-doped BP exhibits high carrier mobility and an exceptional ambient stability. [33] Diverse diode characteristics are observed with the modulation of band alignment at BP/SnSeS interface. Furthermore, we demonstrated a multivalued logic state by varying BP length, suggesting that BP/SnSeS heterostructure has promising application in low-power multivalued logic circuits.The schematic of the proposed BP/SnSeS heterostructure is shown in Figure 1a. Both BP and SnSeS flakes were mechanically exfoliated from their bulk crystals. Using a dry transfer technique, the BP flake was first transferred onto the HfO 2 (30 nm)/ Si substrate with prepared electrical pads, and then exfoliated SnSeS flake was artificially stacked atop the BP flake forming BP/SnSeS heterostructure. After that, multiple metal electrodes were fabricated on the top of BP and SnSeS regions by van der Waals (vdW) heterostructures have attracted intensive attention due to their great potential in future functional electronic and optoelectronic devices. Here, a systematic electrical transport investigation on black phosphorus (BP)/SnSeS heterostructures is presented. The BP/SnSeS heterostructure shows diverse diode functional features by modulating BP cha...

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“…Continuous control of the properties of the material can be achieved by fusing two or more different types of materials with different proportion of the components in the material . For example, continuously tunable bandgap in an alloy can achieve a broad spectral response, which has greater application in the field of optoelectronics . Moreover, the preparation of alloy nanosheets with adjustable components also greatly enriches the system of TMDs material, providing more options and possibilities for device optimization and application.…”

Section: Low‐dimensional Semiconductor Nanomaterialsmentioning

confidence: 99%

Recent advances in low‐dimensional semiconductor nanomaterials and their applications in high‐performance photodetectors

Fang

Zhou

Xiao

et al. 2019

InfoMat

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130

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Low‐dimensional (including two‐dimensional [2D], one‐dimensional [1D], and zero‐dimensional [0D]) semiconductor materials have great potential in electronic/optoelectronic applications due to their unique structure and characteristics. Many 2D (such as transition metal dichalcogenides and black phosphorus) and 1D (such as NWs) materials have demonstrated superior performance in field effect transistors, photodetectors (PDs), and some flexible devices. And in some hybrid structures of 0D materials and 1D or 2D materials, the modification of 1D and 2D devices by 0D materials is embodied. This type of hybrid heterostructure has a larger performance optimization compared with the original. In the application of PDs, the variety of low‐dimensional materials and properties enable wide‐spectrum detection from ultraviolet UV to infrared, which provide a potential option for PDs under various conditions. For flexible electronic devices, high performance and mechanical stability are two important features. Low‐dimensional materials offer unparalleled advantages in flexible devices. In this review, we will focus on the various low‐dimensional materials that have been extensively studied and their applications in the electronics/optoelectronic and flexible electronics. From the composition and lattice structure of materials (including alloys) to the construction of various devices and heterostructures, we will introduce their application and recent development under various conditions. These works can provide valuable guidance for the construction and application of more high‐performance and multifunctional devices.

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Composition-tunable 2D SnSe_2(1−x)S_2x alloys towards efficient bandgap engineering and high performance (opto)electronics

Abstract: 2D SnSe2(1−x)S2x (0 ≤ x ≤ 1) alloys with continuously tunable band gap range from 1.37 to 2.27 eV are systematically synthesized and utilized in high performance (opto)electronic devices.

Cited by 84 publications

References 43 publications

Van der Waals SnSe₂₍₁₋_x₎S₂_x Alloys: Composition‐Dependent Bowing Coefficient and Electron–Phonon Interaction

Van der Waals SnSe₂₍₁₋_x₎S₂_x Alloys: Composition‐Dependent Bowing Coefficient and Electron–Phonon Interaction

Multistate Logic Inverter Based on Black Phosphorus/SnSeS Heterostructure

Recent advances in low‐dimensional semiconductor nanomaterials and their applications in high‐performance photodetectors

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Composition-tunable 2D SnSe2(1−x)S2x alloys towards efficient bandgap engineering and high performance (opto)electronics

Abstract: 2D SnSe2(1−x)S2x (0 ≤ x ≤ 1) alloys with continuously tunable band gap range from 1.37 to 2.27 eV are systematically synthesized and utilized in high performance (opto)electronic devices.

Cited by 84 publications

References 43 publications

Van der Waals SnSe2(1−x)S2x Alloys: Composition‐Dependent Bowing Coefficient and Electron–Phonon Interaction

Van der Waals SnSe2(1−x)S2x Alloys: Composition‐Dependent Bowing Coefficient and Electron–Phonon Interaction

Multistate Logic Inverter Based on Black Phosphorus/SnSeS Heterostructure

Recent advances in low‐dimensional semiconductor nanomaterials and their applications in high‐performance photodetectors

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Product

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Composition-tunable 2D SnSe_2(1−x)S_2x alloys towards efficient bandgap engineering and high performance (opto)electronics

Van der Waals SnSe₂₍₁₋_x₎S₂_x Alloys: Composition‐Dependent Bowing Coefficient and Electron–Phonon Interaction

Van der Waals SnSe₂₍₁₋_x₎S₂_x Alloys: Composition‐Dependent Bowing Coefficient and Electron–Phonon Interaction