Composition tuning of room-temperature nanolasers

Luan, Chunyan; Liu, Y.K.; Jiang, Yang; Jie, Jiansheng; Bello, I.; Lee, S.T.; Zapien, Juan Antonio

doi:10.1016/j.vacuum.2011.07.004

Cited by 13 publications

(6 citation statements)

References 30 publications

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“…Zapien et al [66] and Liu et al [67] reported that the full composition tunability makes their CdS x Se 1−x (0<x<1) and Zn y Cd 1−y S (0<y<1) nanoribbon lasers continuously cover the whole wavelength ranges of 350-510 and 510-710nm (Figure 1a), respectively. Later on, Pan et al [68] and Luan et al [69] showed that this [74]. Copyright (2013) American Chemical Society.…”

Section: Wavelength Tunabilitymentioning

confidence: 94%

Toward electrically driven semiconductor nanowire lasers

Zhang

Saxena

Aagesen³

et al. 2019

Nanotechnology

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Semiconductor NanoWire (NW) lasers are highly promising for making new generation coherent light sources with the advantages of ultra-small size, high efficiency, easy integration and low cost. Over the past 15 years, this area of research has been developing rapidly, with extensive reports of optically pumped lasing in various inorganic and organic semiconductor NWs. Motivated by these developments, substantial efforts are being made to make NW lasers electrically pumped, which is necessary for their practical implementation. In this review, we first categorise the NW lasers according to the lasing wavelength and wavelength tunability. Then, we summarize the methods used for achieving single-mode lasing in NWs. After that, we review the reports on lasing threshold reduction and the realization of electrically-pumped NW lasers. Finally, we offer our perspective on future improvements and trends.

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Section: Wavelength Tunabilitymentioning

confidence: 94%

Toward electrically driven semiconductor nanowire lasers

Zhang

Saxena

Aagesen³

et al. 2019

Nanotechnology

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“…These include II-VI and III-V semiconductors and metal oxides, such as ZnO [42,44], GaN [45,127], CdS [2], CdSe [55], GaSb [16], ZnS [21], Cr 2+ -doped ZnSe [26], graded CdSxSe 1−x [59], InGasAs/GaAs [15], GaAs/GaAsP [43], and InGaN/GaN [106]. The achievable wide spectral range allows various possible applications for these nanolasers.…”

Section: (A) Materialsmentioning

confidence: 99%

Nanowire Lasers

et al. 2015

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Abstract:We review principles and trends in the use of semiconductor nanowires as gain media for stimulated emission and lasing. Semiconductor nanowires have recently been widely studied for use in integrated optoelectronic devices, such as light-emitting diodes (LEDs), solar cells, and transistors. Intensive research has also been conducted in the use of nanowires for subwavelength laser systems that take advantage of their quasione-dimensional (1D) nature, flexibility in material choice and combination, and intrinsic optoelectronic properties. First, we provide an overview on using quasi-1D nanowire systems to realize subwavelength lasers with efficient, directional, and low-threshold emission. We then describe the state of the art for nanowire lasers in terms of materials, geometry, and wavelength tunability. Next, we present the basics of lasing in semiconductor nanowires, define the key parameters for stimulated emission, and introduce the properties of nanowires. We then review advanced nanowire laser designs from the literature. Finally, we present interesting perspectives for low-threshold nanoscale light sources and optical interconnects. We intend to illustrate the potential of nanolasers in many applications, such as nanophotonic devices that integrate electronics and photonics for next-generation optoelectronic devices. For instance, these building blocks for nanoscale photonics can be used for data storage and biomedical applications when coupled to on-chip characterization tools. These nanoscale monochromatic laser light sources promise breakthroughs in nanophotonics, as they can operate at room temperature, can potentially be electrically driven, and can yield a better understanding of intrinsic nanomaterial properties and surface-state effects in lowdimensional semiconductor systems.

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“…Wavelength tunability of lasers is one of the most important parameters for practical applications such as optical communication, environmental monitoring, and spectroscopy analysis 14–18. Recently, tunable semiconductor NW and nanoribbon lasers have been realized, using tunable bandgap nanostructures as the composition tunable gain media 19–26. In this approach, alloyed semiconductor NWs with different bandgaps are necessary components for wavelength tuning; a careful composition control is required in order to obtain high crystal quality stoichiometric NWs 27–29.…”

mentioning

confidence: 99%

“…Until now, wide‐wavelength tunable lasers have only been realized using different NWs as gain media,19–26 but few have been reported on a single non‐doped NW. In this paper, we demonstrate an efficient way to achieve wide‐wavelength tunable lasers on single non‐doped CdSe NWs.…”

mentioning

confidence: 99%

Wavelength Tunable CdSe Nanowire Lasers Based on the Absorption‐Emission‐Absorption Process

et al. 2012

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Wavelength tunability of lasers is one of the most important parameters for achieving practical applications such as optical communication, environmental monitoring, and spectroscopy analysis. A wide‐wavelength tunable laser is demonstrated on a single non‐doped CdSe nanowire (NW) without changing pumping intensity and position, but by simply gradually cutting the NW shorter instead. The corresponding mechanism for the large wavelength shifts is determined as the absorption‐emission‐absorption (AEA) process in polar CdSe NWs.

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Composition tuning of room-temperature nanolasers

Cited by 13 publications

References 30 publications

Toward electrically driven semiconductor nanowire lasers

Toward electrically driven semiconductor nanowire lasers

Nanowire Lasers

Wavelength Tunable CdSe Nanowire Lasers Based on the Absorption‐Emission‐Absorption Process

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