Compositional analysis and depth profile studies on undoped and doped tin oxide films prepared by spray technique

Amanullah, F. M.; Pratap, K. J.; Babu, V. Hari

doi:10.1016/s0921-5107(98)00113-5

Cited by 90 publications

(42 citation statements)

References 18 publications

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“…[33] Afify et al and Agashe et al reported that the (200) plane is particularly sensitive to substrate temperature which controls the growth of the films. [34,35] Belanger et al prepared FTO films by CVD and observed that for films with a thickness of around 0.4 mm the dominant planes were found to be the (200), (400), (301) and (211).…”

Section: Resultsmentioning

confidence: 99%

Textured Fluorine‐Doped Tin Dioxide Films formed by Chemical Vapour Deposition

Bhachu

Waugh

Zeissler

et al. 2011

Chemistry A European J

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The use of an aerosol delivery system enabled fluorine-doped tin dioxide films to be formed from monobutyltin trichloride methanolic solutions at 350-550 °C with enhanced functional properties compared with commercial standards. It was noted that small aerosol droplets (0.3 μm) gave films with better figures of merit than larger aerosol droplets (45 μm) or use of a similar precursor set using atmospheric pressure chemical vapour deposition (CVD) conditions. Control over the surface texturing and physical properties of the thin films were investigated by variation in the deposition temperature and dopant concentration. Optimum deposition conditions for low-emissivity coatings were found to be at a substrate temperature of about 450 °C with a dopant concentration of 1.6 atm% (30 mol% F:Sn in solution), which resulted in films with a low visible light haze value (1.74%), a high charge-carrier mobility (25 cm(2) V s(-1)) and a high charge-carrier density (5.7×10(20) cm(-3)) resulting in a high transmittance across the visible (≈80%), a high reflectance in the IR (80% at 2500 nm) and plasma-edge onset at 1400 nm. Optimum deposition conditions for coatings with applications as top electrodes in thin film photovoltaics were found to be a substrate temperature of about 500 °C with a dopant concentration of 2.2 atm% (30 mol% F:Sn in solution), which resulted in films with a low sheet resistance (3 Ω sq(-1)), high charge-carrier density (6.4×10(20) cm(-3)), a plasma edge onset of 1440 nm and the films also showed pyramidal surface texturing on the micrometer scale which corresponded to a high visible light haze value (8%) for light scattering and trapping within thin film photovoltaic devices.

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Section: Resultsmentioning

confidence: 99%

Textured Fluorine‐Doped Tin Dioxide Films formed by Chemical Vapour Deposition

Bhachu

Waugh

Zeissler

et al. 2011

Chemistry A European J

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“…The O1s peak centered at 531.0 eV is given in Fig.1(c). According to Amanullah's report [10], generally, the O1s peak has been observed in the binding energy region of 529-535 eV. The peak around 529-530 eV is ascribed to lattice oxygen.…”

Section: Methodsmentioning

confidence: 95%

The growth and properties of self-assembled GaN nanorods, nanoparticles and nanotubes on Si substrates by annealing GaN/ZnO films

Cao¹,

Hu²

2017

Proceedings of the 2017 6th International Conference on Measurement, Instrumentation and Automation (ICMIA 2017)

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Abstract. GaN nanostructured films have been successfully grown through radio frequency magnetron sputtering system via annealing GaN/ZnO films in ammonia ambient at 950℃. The volatilization of ZnO buffer layer plays an important role in the formation process of GaN nanostructures. X-ray diffraction (XRD), transmission electron microscope (TEM), x-ray photoelectron spectroscopy (XPS) and photoluminescence (PL) are used to analyze the structure, morphology, composition and optical properties of the as-grown products. The XRD and selected area electron diffraction (SAED) indicate that the reflections of the samples can be indexed to the hexagonal GaN phase. TEM shows that the products are of pure hexagonal GaN single crystal. By XPS spectra, quantification of peaks gives the atomic ratio of Ga to N of about 1:1.1. The photoluminescence (PL) spectrum indicates that the GaN have a good emission property, which will have potential advantages for applications in laser device using one-dimensional structures. Finally, the proposed growth mechanism is also briefly discussed.

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“…According to Amanullah et al [21], generally, the O1s peak had been observed in the binding energy region of 529-535 eV and the peak around 529-530 eV is ascribed to lattice oxygen [22]. For chemisorbed O 2 on the surface, the binding energy ranged from 530.0 to 530.9 eV.…”

Section: Methodsmentioning

confidence: 98%

Effect of the ammoniating time on microstructure and morphology of one-dimensional Mg-doped GaN nanowires catalysed with Au

Shi

Huang

Xue

2011

Journal of Experimental Nanoscience

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Mg-doped GaN nanowires have been successfully synthesised on Si(1 1 1) substrates by magnetron sputtering through ammoniating Ga 2 O 3 /Au thin films, and the effect of ammoniating time on microstructure and morphology were analysed in detail. X-ray diffraction, X-ray photoelectron spectroscopy, scanning electron microscopy, high-resolution transmission electron microscopy and photoluminescence spectrum were carried out to characterise the microstructure, morphology and optical properties of the GaN samples. The results demonstrate that the nanowires after ammonification at 900 C for 15 min are single crystal GaN with a hexagonal wurtzite structure and high crystalline quality, having the size of 50-80 nm in diameter, more than 10 microns in length and good emission properties. The growth direction of this nanowire is parallel to [0 0 1] direction of hexagonal unit cell. Ammoniating time has a great impact on the microstructure, morphology and optical properties of the GaN nanowires.

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Compositional analysis and depth profile studies on undoped and doped tin oxide films prepared by spray technique

Cited by 90 publications

References 18 publications

Textured Fluorine‐Doped Tin Dioxide Films formed by Chemical Vapour Deposition

Textured Fluorine‐Doped Tin Dioxide Films formed by Chemical Vapour Deposition

The growth and properties of self-assembled GaN nanorods, nanoparticles and nanotubes on Si substrates by annealing GaN/ZnO films

Effect of the ammoniating time on microstructure and morphology of one-dimensional Mg-doped GaN nanowires catalysed with Au

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