Compositional and structural characterization of indium nitride using swift ions

Vacancies and interstitials in indium nitride: Vacancy clustering and molecular bondlike formation from first principles

“…We suggest that the nitrogen split interstitial could be the defect which results in the N-N bonding as measured by the UV-Raman system, 21 N 2 dimer 23 or interstitial N atoms or molecules. 44 The calculated formation energy for the nitrogen antisite, which could also be described as the complex ͑V In + N split interstitial͒ and the defect complex V N +N In in n-type material, is too high for it to occur in appreciate concentrations in thermal equilibrium under either N-rich or In-rich conditions. The In-vacancy clusters could exist under N-rich condition, giving rise to nitrogenmolecular-like bonding configurations.…”

“…21 Other possibilities, however, such as molecular nitrogen or di-nitrogen interstitials cannot be excluded. Using swift ions, Timmers et al 44 suggested that InN contains N atoms or molecules interstitially. Under N-rich conditions, the formation of In vacancies, N 2 , and the antisite N In have been reported; and under In-rich conditions, the formation of N vacancies and In N have been observed by energydispersive x-ray analysis for InN films grown at 300-550°C.…”

Anomalous magnetism of superconducting Mg-doped InN film

“…2(a) indicates the unknown peak of the impurity phases, which may arise from the zinc-blende InN, InN (10-11) or elemental indium. 31,34,35 The volume fraction of the impurity phase, estimated as I im I InN:Mg , is around 5 %, where I im is the intensity of the unknown peak and I I n N :M g is the intensity of the InN:Mg (0002) peak. The calculated c-lattice parameter of the InN film is 5.725 Å that of the Mg-doped InN film is 5.718 Å. Xie et al have shown that increasing the Mg concentration from 10 18 cm −3 to 10 21 cm −3 reduced the c-lattice parameters by 0.02 Å and increased the a-lattice parameters by 0.02 Å by the strain generated during growth process.…”

Low activation energy for the removal of excess nitrogen in nitrogen rich indium nitride

“…Keeping in mind the pitfalls of many standard chemical analysis techniques when applied to InN (see the review by Butcher and Tansley 23 ) we applied a stoichiometry analysis technique whose methodology has been developed specifically for accurate In:N determination, that is elastic recoil detection (ERD) analysis. 6,8,11 Figure 1 the N/In ratios, reported previously in reference, 10 which were measured for the films as a function of film growth temperature. As shown in the plot the N/In ratio is very high for the film growth temperature of 200 C but drops steadily to only slightly nitrogen rich stoichiometry at film growth temperatures of 400 C and greater.…”

“…2,3 However, as early as 2002 (Ref. 4) and more widely afterward, [5][6][7][8][9][10][11][12][13] we published work on the observation of surprisingly large amounts of excess nitrogen measured in InN grown by RF sputtering, remote plasma enhanced chemical vapour deposition (RPECVD), and to a lesser extent, in some thin plasma assisted molecular-beam epitaxy (PA-MBE) grown samples. In some extreme cases, for films grown at low temperatures, we measured N/In ratios as high as 1.7.…”