Compositional Correlation between the Nanoparticle and the Growing Au-Assisted InxGa1–xAs Nanowire

Sjökvist, Robin; Jacobsson, Daniel; Tornberg, Marcus; Wallenberg, Reine; Leshchenko, Egor D.; Johansson, Jonas; Dick, Kimberly A.

doi:10.1021/acs.jpclett.1c02121

Cited by 20 publications

(40 citation statements)

References 25 publications

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“…However, if the self-regulating effect occurs, this can be an explanation for why InGaAs nanowires can grow in any composition within the miscibility gap of the system. 10 We have also shown that multilayers can emerge in conjunction with the formation of a sharp heterostructure. This is of course a much larger perturbation to the system than a small change in composition or a crystallographic twin, so it is reasonable to assume that the effect is larger.…”

Section: ■ Discussionmentioning

confidence: 67%

“…The nanoparticle composition was also measured before and after the multilayer growth, which revealed that the nanoparticle composition was more consistent, with Ga < 3 atom % and In > 40 atom %, similar to earlier in situ studies of In x Ga 1−x As growth. 10 In order to learn more about the implications this multilayer growth has on the evolution of the nanowire, the layer propagation times of the individual layers were studied further. Figure 4 shows the layer propagation time of individual layers as a function of the average number of layers that grow simultaneously during the growth of said layer.…”

Section: Dynamics Of Multilayer Stacksmentioning

confidence: 99%

“…Since compositional control is central for the ability to tailor ternary nanowires to specific applications, 7,8 ternary compositions have been investigated both ex situ 9 and in situ. 10 It has recently been shown that the layer evolution in ternary nanowires can determine and affect the resulting composition, 11 which gives a reason to believe that the presence of multiple growing layers will affect the overall composition in the segment. Another way to tailor the properties of nanowires is to incorporate different segments into the structure, forming heterostructures where the ternary composition or III−V material changes abruptly along the nanowire.…”

Section: ■ Introductionmentioning

confidence: 99%

“…In ternary nanowires, another element of either group III or V is incorporated, and the final properties are weighted combinations between the two resulting binaries (e.g., In x Ga 1– x As or GaAs x Sb 1– x ). Since compositional control is central for the ability to tailor ternary nanowires to specific applications, , ternary compositions have been investigated both ex situ and in situ . It has recently been shown that the layer evolution in ternary nanowires can determine and affect the resulting composition, which gives a reason to believe that the presence of multiple growing layers will affect the overall composition in the segment.…”

Section: Introductionmentioning

confidence: 99%

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Observation of the Multilayer Growth Mode in Ternary InGaAs Nanowires

et al. 2022

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Au-seeded semiconductor nanowires have classically been considered to only grow in a layer-by-layer growth mode, where individual layers nucleate and grow one at a time with an incubation step in between. Recent in situ investigations have shown that there are circumstances where binary semiconductor nanowires grow in a multilayer fashion, creating a stack of incomplete layers at the interface between a nanoparticle and a nanowire. In the current investigation, the growth behavior in ternary InGaAs nanowires has been analyzed in situ, using environmental transmission electron microscopy. The investigation has revealed that multilayer growth also occurs for ternary nanowires and appears to be more common than in the binary case. In addition, the size of the multilayer stacks observed is much larger than what has been reported previously. The investigation details the implications of multilayers for the overall growth of the nanowires, as well as the surrounding conditions under which it has manifested. We show that multilayer growth is highly dynamic, where the stack of layers regularly changes size by transporting material between the growing layers. Another observation is that multilayer growth can be initiated in conjunction with the formation of crystallographic defects and compositional changes. In addition, the role that multilayers can have in behaviors such as growth failure and kinking, sometimes observed when creating heterostructures between GaAs and InAs ex situ, is discussed. The prevalence of multilayer growth in this ternary material system implies that, in order to fully understand and accurately predict the growth of nanowires of complex composition and structure, multilayer growth has to be considered.

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Section: ■ Discussionmentioning

confidence: 67%

Section: Dynamics Of Multilayer Stacksmentioning

confidence: 99%

Section: ■ Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Observation of the Multilayer Growth Mode in Ternary InGaAs Nanowires

et al. 2022

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“…A common topic for discussing the growth of ternary III–V nanowires, using InGaAs as a model system, is the miscibility gap. The miscibility gap exists for the bulk system, and because of this, it is a naturally emerging result of many thermodynamic models for predicting the nanowire composition. ,, However, experimentally grown nanowires have shown compositions within the miscibility gap. ,, This calls into question what suppresses the miscibility gap in experimental growth, and one potential candidate would be strain. For bulk systems consisting of (pseudo)binary materials with a large mismatch (like the InAs–GaAs system), strain can lead to narrowing of the miscibility gap and prevention of spinodal decomposition in these materials systems. , However, strain is difficult to capture in conventional steady state models, since strain has no effect if the composition of the solid is always constant.…”

Section: Introductionmentioning

confidence: 99%

Simulating Vapor–Liquid–Solid Growth of Au-Seeded InGaAs Nanowires

2022

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Ternary III−V nanowires are commonly grown using the Au-seeded vapor−liquid−solid method, wherein the solid nanowires are grown from nanoscale liquid seed particles, which are supplied with growth species from the surrounding vapor phase. A result of the small size of these seed particles is that their composition can vary significantly during the cyclical layer-by-layer growth, despite experiencing a constant pressure of growth species from the surrounding vapor phase. Variations in the seed particle composition can greatly affect the solid nanowire composition, and these cyclical dynamics are poorly understood for ternary nanowire growth. Here, we present a method for simulating nanowire growth which captures the complex cyclical dynamics using a kinetic Monte Carlo framework. In the framework, a nanowire grows through the attachment or detachment of one III−V pair at the time, with rates that are based on the momentary composition of the seed particle. The composition of the seed evolves through the attachment and detachment of III−V pairs to the solid nanowire and through the impingement or evaporation of single atoms to the surrounding vapor. Here, we implement this framework using the As−Au−Ga−In materials system and use it to simulate the growth of Auseeded InGaAs nanowires with an average solid Ga/III ratio around 0.5. The results show that nucleation preferentially occurs via clusters of InAs and that the compositional hierarchy of the liquid seed (X As < X Ga < X In ) determines much of the dynamics of the system. We see that imposing a constraint on the simulation, that only the most recently attached III−V pair can be detached, resulted in a significant narrowing of the compositional profile of the nanowire. In addition, our results suggest that, for ternary systems where the two binaries are heavily mismatched, the dynamics of the seed particle may result in an oscillating compositional profile.

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Visualizing the Mechanism Switching in High-Temperature Au-Catalyzed InAs Nanowire Growth

Steinvall

Johansson

Lehmann

et al. 2023

Crystal Growth & Design

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We use environmental transmission electron microscopy to observe in situ the switch from an axial vapor−liquid− solid (VLS) growth mechanism in Au-catalyzed InAs nanowires toward a radial vapor−solid (VS) one, dominated by layers nucleating at the triple-phase line. At elevated temperatures, in addition to high V/III ratios, the affinity for In in the Au catalyst will be greater than that of In in InAs, which in turn reduces the driving force and probability for nucleation at the liquid−solid interface. Consequently, with increased temperature, the catalyst particle stops acting as a sink for incoming material and the decomposition of precursors away from the catalyst increases, making radial vapor−solid growth the dominating growth mechanism. It is further observed that the growth proceeds through multistep propagation rather than a layer-by-layer propagation under these conditions.

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Compositional Correlation between the Nanoparticle and the Growing Au-Assisted In_xGa_1–xAs Nanowire

Cited by 20 publications

References 25 publications

Observation of the Multilayer Growth Mode in Ternary InGaAs Nanowires

Observation of the Multilayer Growth Mode in Ternary InGaAs Nanowires

Simulating Vapor–Liquid–Solid Growth of Au-Seeded InGaAs Nanowires

Visualizing the Mechanism Switching in High-Temperature Au-Catalyzed InAs Nanowire Growth

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