Compositional dependence of band-gap energy and conduction-band effective mass of In1−x−yGaxAlyAs lattice matched to InP

Olego, D. J.; Chang, T. Y.; Silberg, E.; Caridi, E. A.; Pinczuk, A.

doi:10.1063/1.93537

Cited by 181 publications

(44 citation statements)

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“…Especially the ternary subsystems of AlGaAs and InGaAs grown on GaAs are well characterized, due to their applications for devices in the wavelength range of 750-1000 nm. Also, band gap relations and effective masses for the quaternary InAlGaAs alloys, lattice matched to InP substrates, have been investigated, [1][2][3][4][5][6][7][8] since here the band gap range covers the important wavelengths around 1.55 m for optical communication. However, little has been reported for InAlGaAs grown on GaAs substrates.…”

Section: Introductionmentioning

confidence: 99%

Optical properties of InAlGaAs quantum wells: Influence of segregation and band bowing

Jensen

Hvam

Langbein

1999

Journal of Applied Physics

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Knowledge of the quaternary InAlGaAs material system is very limited for the composition range relevant for growth on GaAs substrates. We report on the characterization and modeling of InAlGaAs quantum wells with AlGaAs barriers, grown pseudomorphically on a GaAs substrate with molecular beam epitaxy. The quantum wells are characterized with photoluminescence, and the measured transition energies are modeled taking into account the influence of In segregation on the shape of the well potential. From the modeling we deduce a relation for the low temperature band gap of unstrained In x (Al y Ga 1Ϫy ) 1Ϫx As, for 0рx,yр0.20. The measured linewidths of the luminescence peaks are in agreement with the broadening expected from random alloy fluctuations and well width fluctuations with an effective interface roughness of 1.1 ML.

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Section: Introductionmentioning

confidence: 99%

Optical properties of InAlGaAs quantum wells: Influence of segregation and band bowing

Jensen

Hvam

Langbein

1999

Journal of Applied Physics

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“…The existence of non-linear dependence in the band-gap energy to the aluminium content, also known as the bowing effect, of In 1 − x − y Ga x Al y As has been well supported by the experiment [6][7][8] and theoretical [9] results. Contrarily, independent measure-ment results [10][11][12][13][14] showed linear variations of bandgap energy to the aluminium content.…”

Section: Introductionmentioning

confidence: 48%

“…As mentioned in the previous section, the bowing value is known to be contentious, and most of the bowing values are deduced from (3) but not from the weighted-sum scheme. For instance, fitting of Olego's result [7] using (3) would yield a bowing value of 0.20 eV. Other than that, bowing values of 0.22 eV [5], and 0.257 eV [9] had also been suggested by independent reports.…”

Section: Analysis Of the Existing Band-gap Interpolation Methods And mentioning

confidence: 93%

“…The most quoted, and probably the first, report of the bandgap energy of In 1 − x − y Ga x Al y As (denoted as InGaAlAs hereafter) over a wide composition range lattice matched to InP was published by Olego et al in 1982. From the photoluminescence (PL) measurement on the samples grown by molecular beam epitaxy (MBE), the empirically determined band-gap energy variation of InGaAlAs to the aluminium content, y, was expressed as the analytical formula below [7]:…”

Section: Analysis Of the Existing Band-gap Interpolation Methods And mentioning

confidence: 99%

“…From the photoluminescence (PL) measurement on the samples grown by molecular beam epitaxy (MBE), the empirically determined band-gap energy variation of InGaAlAs to the aluminium content, y, was expressed as the analytical formula below [7]:…”

Section: Analysis Of the Existing Band-gap Interpolation Methods And mentioning

confidence: 99%

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A convenient band-gap interpolation technique and an improved band line-up model for InGaAlAs on InP

et al. 2010

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The band-gap energy and the band line-up of InGaAlAs quaternary compound material on InP are essential information for the theoretical study of physical properties and the design of optoelectronics devices operating in the long-wavelength communication window. The bandgap interpolation of In 1 − x − y Ga x Al y As on InP is known to be a challenging task due to the observed discrepancy of experimental results arising from the bowing effect. Besides, the band line-up results of In 1 − x − y Ga x Al y As on InP based on previously reported models have limited success by far. In this work, we propose an interpolation solution using the single-variable surface bowing estimation interpolation method for the fitting of experimentally measured In 1 − x − y Ga x Al y As band-gap data with various degree of bowing using the same set of input parameters. The suggested solution provides an easier and more physically interpretable way to determine not only lattice matched, but also strained band-gap energy of In 1 − x − y Ga x Al y As on InP based on the experimental results. Interpolated results from this convenient method show a more favourable match to multiple independent experiment data sets measured under different temperature conditions as compared to those obtained from the commonly used weighted-sum approach. On top of that, extended framework of the model-solid theory for the band line-up of In 1 − x − y Ga ture is proposed. Our model-solid theory band line-up result using the proposed extended framework has shown an improved accuracy over those without the extension. In contrast to some previously reported works, it is worth noting that the band line-up result based on our proposed extended model-solid theory has also shown to be more accurate than those given by Harrison's model.

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Energy‐Band Structure: Effective Masses

Adachi

2009

Properties of Semiconductor Alloys

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Compositional dependence of band-gap energy and conduction-band effective mass of In1−x−yGaxAlyAs lattice matched to InP

Cited by 181 publications

References 5 publications

Optical properties of InAlGaAs quantum wells: Influence of segregation and band bowing

Optical properties of InAlGaAs quantum wells: Influence of segregation and band bowing

A convenient band-gap interpolation technique and an improved band line-up model for InGaAlAs on InP

Energy‐Band Structure: Effective Masses

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