Compositional dependence of the elastic constants of dilute GaAs1−xNx alloys

Beaudry, J.-N.; Shtinkov, N.; Masut, R. A.; Desjardins, P.; Riobóo, R. J. Jiménez

doi:10.1063/1.2736340

Cited by 5 publications

(3 citation statements)

References 34 publications

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“…The simulations were carried out assuming perfectly abrupt and coherent interfaces, and linearly interpolated elastic constants. 25 The measured and simulated curves are in good agreement with respect to the angular position and relative intensities of both the diffraction peaks and the interference fringes. Nitrogen compositions extracted from the analysis of HR-XRD scans assuming Vegard's rule are reported in Table I for all samples.…”

Section: Resultsmentioning

confidence: 52%

Evidence of valence band perturbations in GaAsN/GaAs(001): Combined variable-angle spectroscopic ellipsometry and modulated photoreflectance investigation

et al. 2009

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The contribution of the fundamental gap E_ as well as those of the E_ + ∆ so and E + transitions to the dielectric function of GaAs 1-x N x alloys near the band edge were determined from variableangle spectroscopic ellipsometry and modulated photoreflectance spectroscopy analyses. The oscillator strength of the E_ optical transition increases weakly with nitrogen incorporation. The two experimental techniques independently reveal that not only the oscillator strength of the E + transition but also that of E_ + ∆ so become larger compared to that of the fundamental gap as the N content increases. Since the same conduction band is involved in both the E_ transition and its split-off replica, these results reveal that adding nitrogen in GaAs 1-x N x alloys affects not only the conduction but also the valence bands.

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Section: Resultsmentioning

confidence: 52%

Evidence of valence band perturbations in GaAsN/GaAs(001): Combined variable-angle spectroscopic ellipsometry and modulated photoreflectance investigation

et al. 2009

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“…This technology exploit a supplementary blue shift band state called E + , generally revealed above E -, by 0.4 to 0.8, eV in the spectra measurement, depending of the increased nitrogen concentration [12], [13]. Despite, the great progress made in growing GaAsN based solar cells to improve their efficiency such as molecular beam epitaxy (MBE) [14], [15] or organometallic vapor phase epitaxy (OMVPE) technique [16], the immiscibility of nitrogen into GaAs host induces nonuniformity of nitrogen distribution in the matrix and implies fluctuation at conduction band edge. In view to enhance much more the performance of GaAsN, it will be regenerative to overcome the nitrogen localization effects that stimulate traps for carrier recombination (excitons) over a local potential perturbation.…”

Section: Introductionmentioning

confidence: 99%

GaAs-δ layered within nitrogen for high efficiency photovoltaic devices: First principle prediction

Madini

Rahmoun

Côté³

2014

2014 North African Workshop on Dielectic Materials for Photovoltaic Systems (NAWDMPV)

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intense solar radiation and arid region in Algeria should be a promising issue to upgrade eco-friendly energy source alternative and promote climate change lute. For this purpose, we propose first principle investigation of the structural and the electronic bulk properties of the promising GaAsN alloy in delta-layer configuration within the aid of density functional theory framework. The simulation has been done to estimate the adequacy of this quantum design for optoelectronic and high efficiency photovoltaic applications. We particularly predict the evolution of the δ-layered Ga n As 1-n N 1 lattice constant for x=1/n in the range of 0

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“…The rocking curves were simulated using the the Takagi-Taupin equations of the dynamical diffraction theory 13 under the assumptions that the layers are pseudomorphic with the GaAs substrate, the interfaces are abrupt, and continuum elasticity theory applies. 14 The HRXRD simulations, combined with the TEM images, allow the determination of the GaAsN well thicknesses and nitrogen compositions, which are reported in Table I. The absorption spectra for the samples with x 0.0026 are shown in Fig.…”

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Abnormal broadening of the optical transitions in (Ga,As)N/GaAs quantum wells

et al. 2012

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We have measured the near band-gap absorption of structurally well characterized GaAs 1−x N x quantum wells grown on GaAs(001) with x < 0.014. The spectra were reproduced by a model that includes electron-hole correlations. We find that the width of the excitonic and band-to-band optical transitions are more than twice larger than what is found in conventional III-V alloy heterostructures. This confirms the presence of strong nitrogen-configuration induced band-gap fluctuations reported previously by Bentoumi et al. [Phys. Rev. B 70, 035315 (2004)] for bulk dilute GaAsN alloys.The large band-gap bowing observed in III/V dilute nitride semiconductors finds applications in a variety of optoelectronic devices, such as photovoltaic cells, 1-3 semiconductor lasers, 4,5 and heterojunction bipolar transistors. 6 However, these materials cannot be considered as conventional semiconductor alloys. Aside from the large bowing parameter, the incorporation of nitrogen in GaAs generates two nonparabolic conduction subbands instead of the parabolic one found in GaAs. Furthermore, in bulk layers, nitrogen-induced electronic perturbations imply that the absorption edge cannot be treated as is generally done in III-V semiconductors. 7,8 In particular, it has been found that in bulk GaAs 1−x N x , nitrogenconfiguration fluctuations broaden the absorption edge for x as low as 0.002 and that exciton resonances disappear for x > 0.005. 8 As the sharpness of the near-edge optical transition in quantum confined heterostructures plays an important role in optical device operation, it is also of interest to examine the influence of nitrogen on the optical properties of quantum wells (QWs). Surprisingly, there have only been a few studies on the near band-gap absorption edge in GaAsN/GaAs QWs. Sun et al. 9 followed the temperature dependence of the absorption edge of QWs with x = 0.015. Takao et al. 10 measured the room-temperature absorbance of samples with x 0.037. However, no attempt to analyze the optical transition broadening in QWs as a function of nitrogen content has been presented so far. In this paper, we analyze the broadening mechanisms of dilute GaAsN/GaAs(001) multiple quantum wells (MQWs) with a two-dimensional (2D) adaptation of a model developed for bulk epitaxial layers, 8 and we compare it to the broadening measured in bulk GaAsN epilayers and in QWs composed of conventional III-V alloys.GaAs 1−x N x MQWs in the composition range 0.0005 x 0.014 were grown using metal-organic vapor phase epitaxy on (001) oriented semi-insulating GaAs substrates. Trimethylgallium, tertiarybutylarsine, and dimethylhydrazine were used as gas sources for Ga, As, and N, respectively. The samples, which consist of seven GaAsN/GaAs bilayers capped with a GaAs layer, were grown at 550 • C. Further details on the growth procedure can be found in Ref. 11.The structural quality of the samples was ascertained with high-resolution x-ray diffraction (HRXRD) and transmission electron microscopy (TEM). The HRXRD measurements were carried out in a Philip...

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Compositional dependence of the elastic constants of dilute GaAs1−xNx alloys

Cited by 5 publications

References 34 publications

Evidence of valence band perturbations in GaAsN/GaAs(001): Combined variable-angle spectroscopic ellipsometry and modulated photoreflectance investigation

Evidence of valence band perturbations in GaAsN/GaAs(001): Combined variable-angle spectroscopic ellipsometry and modulated photoreflectance investigation

GaAs-δ layered within nitrogen for high efficiency photovoltaic devices: First principle prediction

Abnormal broadening of the optical transitions in (Ga,As)N/GaAs quantum wells

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Compositional dependence of the elastic constants of dilute GaAs1−xNx alloys

Cited by 5 publications

References 34 publications

Evidence of valence band perturbations in GaAsN/GaAs(001): Combined variable-angle spectroscopic ellipsometry and modulated photoreflectance investigation

Evidence of valence band perturbations in GaAsN/GaAs(001): Combined variable-angle spectroscopic ellipsometry and modulated photoreflectance investigation

GaAs-&#x03B4; layered within nitrogen for high efficiency photovoltaic devices: First principle prediction

Abnormal broadening of the optical transitions in (Ga,As)N/GaAs quantum wells

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GaAs-δ layered within nitrogen for high efficiency photovoltaic devices: First principle prediction