Compositional Depth Profile of a Native Oxide LPCVD MNOS Structure Using X‐Ray Photoelectron Spectroscopy and Chemical Etching

Wurzbach, J. A.; Grunthaner, F. J.

doi:10.1149/1.2119784

Cited by 39 publications

(12 citation statements)

References 21 publications

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“…As with the Si 2p peak, the FWHM of the main component of the N ls peak increases with increased depth and the peak shifts approximately 0.1 eV to higher binding energy. While the peak shift is small, both of these results are consistent with an oxynitride film at the interface (19,25). P2N5 would be expected to produce a N ls peak at 397.8 eV (24) and InN would be expected to produce a N ls peak at 396.8 eV (26).…”

Section: Resultssupporting

confidence: 69%

Plasma Deposited Silicon Nitride for Indium Phosphide Encapsulation

Valco

Kapoor

Biedenbender

et al. 1989

J. Electrochem. Soc.

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The composition and annealing characteristics of plasma deposited silicon nitride encapsulating films on ion implanted indium phosphide have been investigate d . X-ray photoelectron spectroscopy was employed to study the surface of InP substrates cleaned with organic solvents and HF or HIO3 solutions prior to encapsulation. The composition of silicon nitride films deposited with 13.56 MHz RF excitation was determined through Auger electron spectroscopy and infrared spectroscopy both before and after annealing. The hydrogen concentration decreased from 21 to 9% during annealing. InP substrates implanted with silicon at 100 keV to a dose of 5 • 1012 cm -2 and 150 keV to a dose of 3 • 1012 cm -2 had activations of approximately 60% after annealing at 700~ X-ray photoelectron spectroscopic measurements were performed at five depths through the silicon nitride/indium phosphide interface of an annealed and an unannealed sample. No chemical interaction between the film and the substrate was observed before or after annealing. However, a change in the composition of the interfacial native oxides upon annealing is suggested from differences between the oxygen peaks for the unannealed and annealed samples.There is considerable interest in the fabrication of devices and integrated circuits on indium phosphide (InP) substrates. This interest primarily derives from the large saturated drift velocity of electrons in InP and from the lower density of surface states at an insulator/InP interface than at an insulator/GaAs interface, which allows the fabrication of accumulation mode metal-insulator-semiconductor devices (1, 2). The thermal instability of InP at temperatures greater than 362~ (3) creates great difficulties for the development of a technology for doping InP through diffusion. Ion implantation, with its benefits of good control and reproducibility and its potential for allowing a planar and possibly self-aligned (4) fabrication technology, is an attractive alternative to diffusion or epitaxy. Since ion implantation disorders the crystal lattice and since the implanted species must be activated, it is necessary to anneal the substrate after implantation. The temperatures at which good implant activation can be achieved are sufficient to cause incongruent evaporation of the surface of the InP substrate (5). Surface protection can be achieved through the use of a thin encapsulating layer. Plasma deposited silicon nitride films are of particular interest as they are deposited at low temperatures (6). Among the properties of a good encapsulant are good adhesion to the substrate, resistance to cracking and blistering, and no chemical interaction with the substrate (5).The ability of a film to meet the adhesion requirements is related to the stress in the film and to the characteristics of the film-substrate interface which will be dependent on the InP cleaning procedure. We present here the results of a study of two procedures for cleaning InP substrates prior to encapsulation with plasma-deposited silicon nitride. The sil...

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Section: Resultssupporting

confidence: 69%

Plasma Deposited Silicon Nitride for Indium Phosphide Encapsulation

Valco

Kapoor

Biedenbender

et al. 1989

J. Electrochem. Soc.

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“…The liberated oxygen species may react with near surface SiH,Cl, species and again be incorporated in the nitride. So a small 0 concentration in the interface region extending in the nitride in a NOS structure is expected and has also been observed [4]. According to the foregoing the oxygen incorporation in the nitride results in an increase in Si-H bond concentration.…”

Section: Synthesismentioning

confidence: 57%

“…It emerged [l-3] that one must be very careful in the interpretation of measured spectra in electron and X-ray excited electron spectroscopies (AES, XPS) because of artifacts due to the electron beam and the sputter ion beam, which is used to remove superficial oxide layers and to obtain depth profiles. For instance, Wurzbach and Grunthaner applied chemical etching in conjunction with XPS to obtain a detailed compositional depth profile of MNOS structures [4].…”

Section: Characterization Techniquesmentioning

confidence: 99%

“…Here the possible origin of these charges in terms of the structure and composition of the considered interface is dis-cussed. Probably the most detailed study of the LPCVD nitride/native oxide/silicon interfacial region has been published by Wurzbach and Grunthaner [4]. They reported that part of the native oxide still exists, while another part is converted into an oxynitride.…”

Section: Interfacementioning

confidence: 99%

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Characterization of LPCVD and PECVD silicon oxynitride films

Habraken

1987

Applied Surface Science

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The chemical composltion and structure of silicon oxynitrides. deposited in low pressure and plasma enhanced chemical vapour deposition processes are discussed. From an extrapolation of the characteristics of plasma grown oxynitrides a model for the deposition of LPCVD material is derived. A main conclusion of this model is that Si-Si bonds have a larger tendency to occur in this material than Si dangling bonds.

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“…Indeed. in LPCVD Si,N, such an increase of the interfacial oxygen concentration has been observed in a layer of 3-4 nm thickness near the interface [12].…”

Section: Discussionmentioning

confidence: 92%

Hydrogen distribution in oxynitride/oxide structures

Elferink

Heide

Bik

et al. 1987

Applied Surface Science

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Silicon oxynitridefilms with five different O/N ratios were deposited with low pressure chemical vapor deposition on a silicon substrate covered with an oxide. The films were subjected to subsequent post-deposition anneals in N, and H, at 1000°C, and a H plasma at 300 OC to obtain information about the hydrogen chemistry. The overall film compositions were determined with elastic recoil detection. The resonant reaction 15N('H, cyy)"C was used to obtain hydrogen depth profiles. The hydrogen depth profiles are characterized by a value for the bulk concentration and width of the interfacial region. We found that the stability of the hydrogen in the bulk has a maximum for O/N = 0.32. From the measured interfacial widths we deduced that for low values of O/N the stability of hydrogen in the interfacial region is relatively large. For intermediate values of O/N the stability of the hydrogen in the bulk and the interfacial region do not differ significantly, while for high O/N a relatively low stability of the interfacial hydrogen is observed. The O/N dependence of the stability of the interfacial hydrogen is consistent with the bulk stability if we assume that the interfacial oxynitride is oxygen enriched as compared to the bulk oxygen concentration.

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Compositional Depth Profile of a Native Oxide LPCVD MNOS Structure Using X‐Ray Photoelectron Spectroscopy and Chemical Etching

Cited by 39 publications

References 21 publications

Plasma Deposited Silicon Nitride for Indium Phosphide Encapsulation

Plasma Deposited Silicon Nitride for Indium Phosphide Encapsulation

Characterization of LPCVD and PECVD silicon oxynitride films

Hydrogen distribution in oxynitride/oxide structures

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