Compositional disorder inGaAs1−xNx:Hinvestigated by photoluminescence

Abstract

Compositional disorder is investigated by means of photoluminescence ͑PL͒ and PL excitation ͑PLE͒ measurements in as-grown and hydrogen-irradiated GaAs 1−x N x samples ͑x ഛ 0.21% ͒. The dependence of the linewidth of the PLE free-exciton band on N concentration agrees well with that predicted by a theoretical model developed for a purely random alloy. We also find that hydrogen irradiation and ensuing nitrogen passivation reduce significantly the broadening of the free-exciton band. This result is consistent with a removal by hydrogen of the static disorder caused by nitrogen. Finally, an analysis of the dependence of the Stokes shift on the free-exciton linewidth shows that free carriers are thermalized even at low temperature, another indication of a low degree of disorder in the investigated samples.

Influence of bismuth incorporation on the valence and conduction band edges of GaAs1−xBix

“…2, 8,9,18,19 This is also the case for GaAs 0.981 Bi 0.019 , whose PL spectra are shown in Fig. 1͑a͒ for different temperatures.…”

Fabrication of Site‐Controlled Quantum Dots by Spatially Selective Incorporation of Hydrogen in Ga(AsN)/GaAs Heterostructures

“…[3][4][5] Recently, we developed an alternative route toward the patterning of III-V semiconductor heterostructures based on a defect-engineering approach exploiting the hydrogen-induced passivation of N atoms in Ga(AsN) [ 6 ] , (InGa)(AsN), [ 7 ] and Ga(PN) [ 8 ] crystals. Indeed, H atoms form stable N-2H-H complexes [ 9 , 10 ] that wipe out the N effects in the lattice, thus modifying in a controllable manner the electronic (e.g., bandgap energy, [6][7][8] transport, [ 11 ] and spin properties [ 12 ] ), optical (refractive index [ 13 ] ), and structural (lattice constant [ 6 , 14 ] and ordering [ 15 ] ) characteristics of these materials. [ 16 ] Therefore, by allowing H incorporation in selected regions of the sample, it is possible to achieve a spatially tailored modulation of the bandgap energy [ 17 ] as well as of the lattice constant [ 18 ] in the growth plane.…”

Low-temperature emission in dilute GaAsN alloys grown by metalorganic vapor phase epitaxy

“…In samples where x Ӷ x c ͑impurity limit͒, nitrogen pairs NN i generate narrow photoluminescence ͑PL͒ transitions. [10][11][12] While there is agreement on the NN i emission energy, that from the INC is sample dependent. [10][11][12] While there is agreement on the NN i emission energy, that from the INC is sample dependent.…”