Compositional modification of Se-Ge-Sb chalcogenide glasses by addition of arsenic element

Ghayebloo, M.; Tavoosi, M.; Rezvani, M.

doi:10.1016/j.infrared.2017.04.010

Cited by 22 publications

(2 citation statements)

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“…Modification of ChGS, i. e., doping with high doses of impurity of a number of transition metals, leads to a sharp increase in conductivity with a relatively slight change in the optical properties of these materials. In this case, an impurity band with the ionization energy depending on the concentration and the type of the modifier is formed in the ChGS band gap (Ghayebloo et al 2017). The formation of crosslinks between molecular chains due to the presence of modifier atoms can lead to an expansion of the band of localized states of the valence band and a corresponding decrease in the band gap.…”

Section: Resultsmentioning

confidence: 99%

Electric transport in thin modified films of selenide and sulfide of arsenic

Avanesyan¹

2023

PCS

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In the studied ChGS the effect of modification influence on the nature of the temperature dependence of conductivity was found. The value of the latter increases with a decrease in the band gap and, accordingly, with an increase of the activation energy. This energy correlates with the change in the height of the potential barrier at the contact between the metal and the chalcogenide glassy semiconductor for different compositions of As 2 Se 3 and As 2 S 3 materials. The significant role of a single pair of electrons belonging to the atoms of the modifying impurity is noted. The pair of electrons is responsible for the realization of disordered and defective structure and for the formation of the energy system of local states that affect the process of charge carrier transfer.

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Section: Resultsmentioning

confidence: 99%

Electric transport in thin modified films of selenide and sulfide of arsenic

Avanesyan¹

2023

PCS

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“…Chalcogenide glasses are considered as amorphous semiconductors because of non-availability of larger-range order. This property of amorphous semiconductors helps in modifying optical properties by altering its chemical composition [7]. By observing the connection of optical properties and chemical variations of the Sb-Se-Sn glassy system, we can manufacture a wide range of optical devices [8].…”

Section: Introductionmentioning

confidence: 99%

Effect of Sn Incorporation on Physical Parameters of Sb-Se Glassy System

Khajuria

Sharma

2020

J. Sci. Res.

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The rationale of this study is to investigate band gap tailoring of Sb-Se-Sn chalcogenide glasses. This study has been accompanied by the assessment of various theoretical parameters such as average co-ordination number, Lone-pair of electrons, number of constraints, average heat of atomization, mean bond energy and glass transition temperature. It has been observed that almost all these physical parameters have been enhanced with the increase in tin (Sn) content except Lone-pair of electrons. The number of lone-pair electrons has been decreased with the increase in Sn content. The glass transition temperature has been observed to increase due to the addition of Sn atom in the Se-Sb glassy system. The band gap is decreasing with increase in Sn content due to overall decrease in the average single bond energy of the Sb-Se-Sn glassy system.

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