Compositional stability of hafnium aluminates thin films deposited on Si by atomic layer deposition

Driemeier, Carlos; Bastos, Karen Paz; Miotti, Leonardo; Baumvol, Israel Jacob Rabin; Nguyen, Nam V.; Sayan, Şafak; Krug, Cristiano

doi:10.1063/1.1940130

Cited by 11 publications

(6 citation statements)

References 19 publications

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“…Thus, besides reducing the defect concentration, N is also sacrificially used to prevent Hf and Al transport near the surface. Nevertheless, the amount of 18 O incorporated in the nitrided HfAlO / Si structures were substantially lower than in previously reported non-nitrided HfAlO / Si structures. 18 Desorption of molecular species containing Hf and Al result from dissociation processes in the metastable Hf-Al oxide structures.…”

contrasting

confidence: 74%

“…Nevertheless, the amount of 18 O incorporated in the nitrided HfAlO / Si structures were substantially lower than in previously reported non-nitrided HfAlO / Si structures. 18 Desorption of molecular species containing Hf and Al result from dissociation processes in the metastable Hf-Al oxide structures. 12,13 However, different from Hf͑Zr͒ oxides and silicates this dissociation cannot be accounted by SiO desorption from the interfacial region as reported 19,20 by other authors.…”

contrasting

confidence: 74%

“…The O 2 atmosphere was enriched to 97% in the 18 O isotope while the NH 3 atmosphere was enriched to 10% in the 15 N isotope. The profiles of the 18 O and 15 N isotopes incorporated into the HfAlO / Si structures were determined with nanometric depth resolution by narrow resonant nuclear reaction profiling ͑NRP͒, 15 using the 18 O͑p , ␣͒ 15 N and 15 N͑p , ␣␥͒ 12 C nuclear reactions 15 around the resonances at 151 and 429 keV, respectively. Furthermore, NRP analysis using the narrow resonances at 404.9 and 414 keV of the 27 Al͑p , ␥͒ 28 Si ͑Ref.…”

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confidence: 99%

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Metal transport and loss in ultrathin hafnium aluminate films on silicon studied by low, medium, and high energy ion beam analyses

Miotti

Driemeier

Tatsch

et al. 2006

Applied Physics Letters

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confidence: 74%

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confidence: 74%

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confidence: 99%

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Metal transport and loss in ultrathin hafnium aluminate films on silicon studied by low, medium, and high energy ion beam analyses

Miotti

Driemeier

Tatsch

et al. 2006

Applied Physics Letters

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“…Extensive investigations of Hf x Al 1– x O y oxides thin films carried out in recent years were mainly caused by perspectives of their applications as gate dielectrics in complementary metal–oxide–semiconductor technology due to a combination of the desirable electrical properties of hafnium and aluminum binary oxides resulting in high capacitance density, low leakage current, and relatively high crystallization temperature . Hf x Al 1– x O y oxides with promising electrical properties were obtained by electron‐beam gun evaporation , chemical vapor deposition (CVD) .…”

Section: Introductionmentioning

confidence: 99%

Structural, chemical and electrical properties of ALD‐grown Hf_xAl_1–xO_y thin films for MIM capacitors

Chernikova

Markeev

Lebedinskiǐ

et al. 2014

Physica Status Solidi (b)

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In this paper atomic-layer deposition (ALD) Hf x Al 1-x O y thin films with a wide range of metal components concentrations (x ¼ 0.2À0.8) for metal-insulator-metal (MIM) capacitors were investigated with emphasis on the chemical properties and phase composition. It was shown by X-ray diffraction (XRD) that all films are amorphous. X-ray photoelectron spectroscopy (XPS) revealed the same energy position with respect to the valence-band maximum of Al2p and Hf4f lines and a continuous shift of O1s and O-KLL lines toward the higher binding energy (0.45 and 2.2 eV, respectively) with increase of Al content. Both the shape and position of O1s and O-KLL lines indicated the inability to deconvolute it on sublines related to the binary oxides. The calculated modified Auger parameter indicated the change of the ionicity of the bonding in Hf x Al 1-x O y films with change of the composition. Thus, it was proposed that Hf x Al 1-x O y films in all the studied composition range represent amorphous solid solutions. The continuous change of energy bandgap measured by reflected electron energy loss spectroscopy (REELS) from $6.5 eV for Al 2 O 3 to $5.4 eV for HfO 2 and XRD data do not contradict this assumption. Correlation between structural properties of Hf x Al 1-x O y films and electrical properties of MIM capacitors based on them was also shown, that is, continuous change in capacitance density (from 3.1 to 7.4fF/mm 2 ), leakage current density and quadratic voltage coefficient of capacitance with composition change was observed.

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“…It has been shown that Hf-aluminate film with 7% Al deposited by MOCVD remains amorphous up to 900 • C [24]. Another group [25] also reported that Hf-aluminate film deposited by ALD can stay amorphous up to 1000 • C rapid thermal anneal.…”

Section: Aluminatesmentioning

confidence: 98%

Review and perspective of high-k dielectrics on silicon

Hall,

Buiu,

Z. Mitrovic

et al. 2007

JTIT

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The paper reviews recent work in the area of high-k dielectrics for application as the gate oxide in advanced MOSFETs. Following a review of relevant dielectric physics, we discuss challenges and issues relating to characterization of the dielectrics, which are compounded by electron trapping phenomena in the microsecond regime. Nearly all practical methods of preparation result in a thin interfacial layer generally of the form SiOx or a mixed oxide between Si and the high-k so that the extraction of the dielectric constant is complicated and values must be qualified by error analysis. The discussion is initially focussed on HfO2 but recognizing the propensity for crystallization of that material at modest temperatures, we discuss and review also, hafnia silicates and aluminates which have the potential for integration into a full CMOS process. The paper is concluded with a perspective on material contenders for the “end of road map” at the 22 nm node.

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Compositional stability of hafnium aluminates thin films deposited on Si by atomic layer deposition

Cited by 11 publications

References 19 publications

Metal transport and loss in ultrathin hafnium aluminate films on silicon studied by low, medium, and high energy ion beam analyses

Metal transport and loss in ultrathin hafnium aluminate films on silicon studied by low, medium, and high energy ion beam analyses

Structural, chemical and electrical properties of ALD‐grown Hf_xAl_1–xO_y thin films for MIM capacitors

Review and perspective of high-k dielectrics on silicon

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Compositional stability of hafnium aluminates thin films deposited on Si by atomic layer deposition

Cited by 11 publications

References 19 publications

Metal transport and loss in ultrathin hafnium aluminate films on silicon studied by low, medium, and high energy ion beam analyses

Metal transport and loss in ultrathin hafnium aluminate films on silicon studied by low, medium, and high energy ion beam analyses

Structural, chemical and electrical properties of ALD‐grown HfxAl1–xOy thin films for MIM capacitors

Review and perspective of high-k dielectrics on silicon

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Structural, chemical and electrical properties of ALD‐grown Hf_xAl_1–xO_y thin films for MIM capacitors