Compositional, structural and optical properties of Si-rich a-SiC:H thin films deposited by ArF-LCVD

López, Esperanza; Chiussi, S.; Kosch, Ute; González, P.; Serra, J.; Serra, C.; León, B.

doi:10.1016/j.apsusc.2005.03.011

Cited by 19 publications

(6 citation statements)

References 20 publications

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“…20-30%), and 103.5 eV (> 70%). The higher BE component is the fingerprint for SiO 2 , 55 whereas the two lower BE components could be associated to Si coordinated by oxide anions and alkyl organic groups (≈102 eV) 56 and Si-C bonds (≈100 eV), 54 in line with the FTIR characterization. These data suggest that only a partial coverage of the H-terminated silicon surface has been successfully obtained through formation of direct Si-C bonds, as reflected by the large amount of SiO 2 on the surface.…”

Section: Immobilization Of Fulleropyrrolidine 1 On Ps (1-ps)supporting

confidence: 66%

“…The registered BE of the basic Si2p peak can be associated to the H-terminated silicon surface. 53 The higher BE peak component is connected with the presence of silicon oxides, of the SiO x type, 54 due to some surface oxidation. No signals attributed to SiO 2 were detected in the high BE region (Figure S7).…”

Section: Immobilization Of Fulleropyrrolidine 1 On Ps (1-ps)mentioning

confidence: 99%

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Wetting Behavior of Porous Silicon Surfaces Functionalized with a Fulleropyrrolidine

et al. 2006

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We report the immobilization of a fulleropyrrolidine, bearing a dec-9-ynyl functionality, on silicon surfaces through a thermal hydrosilylation protocol. Contact angle measurements on porous silicon (PS) surfaces reveal an unusual dependence of the angle with the PS roughness that apparently contradicts Wenzel's formula. This result has been explained by an extension of Wenzel's model in which the critical angle, which discriminates between the hydrophilic/hydrophobic character of a solid material, is substantially reduced below 90 degrees by surface roughness.

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Section: Immobilization Of Fulleropyrrolidine 1 On Ps (1-ps)supporting

confidence: 66%

Section: Immobilization Of Fulleropyrrolidine 1 On Ps (1-ps)mentioning

confidence: 99%

Wetting Behavior of Porous Silicon Surfaces Functionalized with a Fulleropyrrolidine

et al. 2006

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“…The absence of the 2000 cm –1 peak could also indicate that hydrogen is bonded to silicon mainly as polyhydride. This behavior has been observed for a-SiC:H films obtained by sputtering and PECVD. , Figure shows also that the intensity of wagging and stretching bands undergoes the same decrease in temperature range 200–400 °C. However, between 200 and 400 °C, the increase of T S induces a strong decrease in the intensity of the stretching band comparatively to wagging band.…”

Section: Resultssupporting

confidence: 75%

Effect of Substrate Temperature on (Micro/Nano)Structure of a-SiC:H Thin Films Deposited by Radio-Frequency Magnetron Sputtering.

Daouahi

Rekik

2012

J. Phys. Chem. C

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The nature of the hydrogen bonds and their influence on film (micro/nano)structure has been investigated as a function of substrate temperature T S (200–500 °C) in hydrogenated amorphous silicon carbide (a-SiC:H) thin films. These films were prepared by radio-frequency magnetron sputtering at a common pressure and high hydrogen dilution in the gas phase mixture (Ar + 80% H2). Infrared absorption and Raman spectroscopy experiments have been carried out to characterize the (micro/nano)structure of different series as a function of T S. The results of Fourier transform infrared spectroscopy indicate that all series are characterized by the presence of the low Si–H n and C–H n bond concentration and no absorption band at 2000 cm–1 attributed to isolated monohydride Si–H can be detected, which suggests that the hydrogen is predominantly bonded as polyhydride groups (Si–H2) n , giving the band at 2090 cm–1. The concentration of the Si–C bond and the crystalline fraction, which increase with increasing T S, show an improvement in the crystallinity of the films. The influence of T S on the growth of crystalline nanograins is studied by Raman spectroscopy. At temperatures T S ≥ 200 °C, these films contain Si–C crystallites in addition to the Si nanocrystals distributed in the amorphous network. The Si crystallite size is unaffected by the increase of T S but the size of graphitic domains is reduced and their distribution becomes more disordered. Results of Raman spectroscopy show also that the high values obtained for the line width of transverse acoustic TA-like band toward low frequencies justifies the deconvolution of infrared spectra taking into account the doublet (845 and 910 cm–1). The results of this paper therefore shed light on the origin of amorphous and nanocrystalline structure in the a-SiC:H thin films, which has been a subject of debate for decades.

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“…The peaks identified, along with the vibrational modes, are highlighted in Figure . The presence of Si–C is confirmed by the bands around 607, 645, 737, 780, and 750 cm –1 . , In addition to Si–C, different hydrogenated forms of Si–C, such as Si–CH, Si–CH 2 , and Si–CH 3 were represented by several bands in the range of 645–1250 cm –1 . − The bands around 810 and 1100 cm –1 can be assigned to Si–O vibrations as well . The probability of Si–O bonds is relatively low in such plasma environments comprising strong reducing species of C and hydrogen.…”

Section: Resultsmentioning

confidence: 92%

Reducing the Cut-In Voltage of a Silicon Carbide/p-Silicon Heterojunction Diode Using Femtosecond Laser Ablation

Ali

Piątkowski

Alawadhi

et al. 2022

ACS Appl. Electron. Mater.

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We report on the fabrication of a low-cut-in voltage (a-SiC:H/Si) heterojunction diode using femtosecond laser ablation of silicon wafers in an octane environment. The femtosecond laser-induced plasma simultaneously reduces, carburizes, and hydrogenates the p-type silicon to develop a layer of hydrogenated silicon carbide (a-SiC:H) on top of the p-Si substrate. No reactive gases, source targets, dopants, or diffusion furnaces are required. The obtained current–voltage characteristics of the a-SiC:H/Si diode exhibit a cut-in voltage of 0.16 V, which is significantly lower than the rise potential of a typical SiC Schottky diode (0.75–1.6 eV) or the barrier potential (0.9–1 eV) of a typical p-Si/n-SiC diode. Moreover, this value is far less than the standard cut-in voltage of Si (0.7 V), or the typical body diode SiC MOSFETs (∼3 V). The achieved low cut-in voltage and the modest rectification ratio of the femtosecond laser-fabricated heterojunction diode demonstrate the promising potential of a rapid, facile, and cost-effective method for manufacturing efficient electronic devices.

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Compositional, structural and optical properties of Si-rich a-SiC:H thin films deposited by ArF-LCVD

Cited by 19 publications

References 20 publications

Wetting Behavior of Porous Silicon Surfaces Functionalized with a Fulleropyrrolidine

Wetting Behavior of Porous Silicon Surfaces Functionalized with a Fulleropyrrolidine

Effect of Substrate Temperature on (Micro/Nano)Structure of a-SiC:H Thin Films Deposited by Radio-Frequency Magnetron Sputtering.

Reducing the Cut-In Voltage of a Silicon Carbide/p-Silicon Heterojunction Diode Using Femtosecond Laser Ablation

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