Compositionally graded BaxSr1−xTiO3 thin films for tunable microwave applications

Dielectric properties of columnar-grained (Ba0.75Sr0.25)(Zr0.25Ti 0.75)O3 thin films prepared by pulsed laser deposition

“…The results showed that the tunability and FOM are 53% and 38, respectively. The result is comparable with that of sol-gel-derived BST thin films (40% tunability) [15], Ba(Zr,Ti)O 3 thin films ($45% tunability) [16] and the pulsed laser deposited graded BSZT thin films ($50% tunability) [17].…”

Dielectric properties and high tunability of (100)- and (110)-oriented (Ba0.5Sr0.5)TiO3 thin films prepared by pulsed laser deposition

“…The tunability and K values of BST thin films with high (1 0 0)-and (1 1 0)-orientation were 63% and 45, 62% and 34, respectively, at the applied field of 262.5 kV/cm. The tunability value was higher than that of sol-gel derived BST thin films with (1 0 0)-orientation ($52% at 25.3 kV/cm) [18] and higher than of sol-gel derived BST thin films with random orientation (40% tunability at 230 kV/cm) [19], and of the pulsed laser deposited (Ba,Sr)(Zr,Ti)O 3 thin films (53% tunability at 600 kV/cm) [11] and graded BSZT thin films ($50% tunability at 330 kV/cm) [20]. The value is comparable with that metalorganic-deposited (Ba 0.5 Sr 0.5 )TiO 3 thin films on LNO/Pt(1 1 1)/Ti/SiO 2 /Si substrates (51% tunability at 400 kV/cm) and on LNO/Pt(2 0 0)/Ti/ SiO 2 /Si substrates (60% tunability at 400 kV/cm) [4].…”

Study on dielectric property of BST of gradient thick films

“…The capacitor with multilayer BST thick film performs a more excellent dielectric property than that with monolayer BST thick film. The dielectric properties of BST thick film with different (Ba/Sr) gradient were researched in detail by the Hong Kong Polytechnic University [4,5]. Some similar study was also conducted by Zhai and other persons in the City University of Hong Kong [6], who fabricated BST thick film with different (Ba/Sr) gradient on the LaNiO 3 /Pt/Ti/SiO 2 /Si silicon chip by the solgel method and then obtained the 37% tuning rate under 1 MHz and 300×10 3 V/cm electrical field as well as small dielectric-temperature coefficient.…”