Compound mechanical and chemical-mechanical polishing processing technique for single-crystal silicon carbide

Ban, Xinxing; Tian, Zhuangzhi; Zhu, Jianhui; Duan, Tianxu; Zheng, Shaodong; Wang, Ningchang; Han, Shaoxing; Qiu, Hui; Li, Zhengxin

doi:10.1016/j.precisioneng.2023.12.002

Precision Engineering

2024

DOI: 10.1016/j.precisioneng.2023.12.002

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Compound mechanical and chemical-mechanical polishing processing technique for single-crystal silicon carbide

Xinxing Ban,

Zhuangzhi Tian,

Jianhui Zhu

et al.

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Cited by 8 publications

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“…It has usually been used as a surface precision polishing method for various materials such as copper, aluminum, and tungsten as well as their alloys. [2][3][4] However, the chemical activity of aluminum is stronger than zinc. The metal zinc and aluminum standard electrode potential difference (the standard electrode potential difference of Zn/Zn 2+ is −0.763 V, and the Al/Al 3+ standard electrode potential difference of −1.663 V) is large.…”

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confidence: 99%

Experimental Investigation on Chemical Mechanical Polishing of ZA27 Alloy Considering Galvanic Corrosion at Zn/Al Interface

Qin,

Pan,

et al. 2024

ECS J. Solid State Sci. Technol.

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To improve the surface integrity of ZA27 alloy, a method of chemical mechanical polishing (CMP) considering the galvanic corrosion at the Zn/Al interface is proposed to treat the surface of ZA27 alloy. Firstly, the electrochemical experiment is carried out to study the influence of the pH, H2O2 concentration, and glycine concentration on corrosion potential between zinc and aluminum. Then the Taguchi method integrated with grey relation analysis and fuzzy inference are used to optimize the CMP parameters of ZA27 alloy. Finally, the prediction model of the MRR and surface roughness Ra is established using the mathematical regression analysis method. The experimental results showed that the minimum zinc-aluminum corrosion potential difference is 14 mV when the pH is 10, H2O2 concentration is 1 wt%, and glycine concentration is 0.4 wt%. The optimum CMP parameter is the polishing pressure of 34 kPa, the polishing plate's rotational speed of 70 rpm, and the abrasive particle concentration of 15 wt%. After polishing with the optimum CMP parameter, the MRR is 242 nm/min, and the surface roughness Ra is 13.91 nm. This study demonstrates that the CMP considering the galvanic corrosion at the Zn/Al interface is an effective method for treating ZA27 alloy surface.

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confidence: 99%

Experimental Investigation on Chemical Mechanical Polishing of ZA27 Alloy Considering Galvanic Corrosion at Zn/Al Interface

Qin,

Pan,

et al. 2024

ECS J. Solid State Sci. Technol.

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Surface characteristics and material removal mechanisms during nanogrinding on C-face and Si-face of 4H-SiC crystals: Experimental and molecular dynamics insights

Wang,

Dong,

Kang

et al. 2024

Applied Surface Science

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Atomistic understanding on the surface formation mechanism of nanoscale scratches along different crystal orientations of silicon carbide

Tian,

Yang,

Wang

et al. 2025

Applied Surface Science

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Compound mechanical and chemical-mechanical polishing processing technique for single-crystal silicon carbide

Cited by 8 publications

References 36 publications

Experimental Investigation on Chemical Mechanical Polishing of ZA27 Alloy Considering Galvanic Corrosion at Zn/Al Interface

Experimental Investigation on Chemical Mechanical Polishing of ZA27 Alloy Considering Galvanic Corrosion at Zn/Al Interface

Surface characteristics and material removal mechanisms during nanogrinding on C-face and Si-face of 4H-SiC crystals: Experimental and molecular dynamics insights

Atomistic understanding on the surface formation mechanism of nanoscale scratches along different crystal orientations of silicon carbide

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