GaN-based light-emitting diode (LED) arrays are a promising technology in a wide range of applications. The photoelectric performance of 80um green Micro-LED has been studied in depth, including the temperature dependence current-voltage, ideality factor, capacitance-voltage, carrier concentration distribution, external quantum efficiency (EQE), and luminance. The results of this research have demonstrated that the Micro-LED has excellent performance, with high EQE.