Compound-source molecular beam epitaxy of GaN using GaN powder and ammonia as sources

Sawada, Masaru; Sawadaishi, Masashi; Yamamoto, Hiromi; Arai, Masatoshi; Honda, Toshio

doi:10.1016/j.jcrysgro.2006.11.062

Cited by 7 publications

(8 citation statements)

References 9 publications

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“…Although the polycrystalline or amorphous GaN films were fabricated by CS-MBE technique [3,8] at the temperature below the Al melting point, the violet emission band was dominant in those PL spectra. Thus, the NBE-dominant emission in PL spectra is crucial for the low-temperature growth below the Al melting point by CS-MBE.…”

Section: Discussionmentioning

confidence: 99%

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GaN growth on (111)Al substrates by CS‐MBE and their chemical lift‐off technique

Honda

Hayashi

Sugiura

et al. 2013

Phys. Status Solidi C

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The low‐temperature growth of GaN on (0001) sapphire and (111)Al substrates by compound‐source molecular beam epitaxy (CS‐MBE) with was investigated. Although precise control of the V/III ratio was required for the growth, the near‐bandedge‐emission (NBE)‐dominant photoluminescence spectra of hexagonal GaN layers were observed at RT. The GaN layers were also grown on aluminum substrates with and without nitridation by CS‐MBE. Reflection high‐energy electron diffraction patterns of the layers indicate that the nitridation is effective for GaN growth by CS‐MBE on aluminum substrates. For further improvement of the GaN crystalline quality, the use of epitaxially grown Al layers as the substrates for the growth was proposed. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Section: Discussionmentioning

confidence: 99%

“…GaN powder and ammonia were used as sources [3]. GaN was supplied by a K-cell, whose temperature ranged from 860 to 900 °C.…”

Section: Methodsmentioning

confidence: 99%

GaN growth on (111)Al substrates by CS‐MBE and their chemical lift‐off technique

Honda

Hayashi

Sugiura

et al. 2013

Phys. Status Solidi C

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“…GaN powders and ammonia were used as the sources in CS-MBE growth [7]. Here, the ammonia was introduced into the growth chamber after preheating at 700 1C.…”

Section: Methodsmentioning

confidence: 99%

Nitridation of (1 1 1)Al substrates for GaN growth by molecular beam epitaxy

Sawadaishi

Taguchi

Sasaya

et al. 2009

Journal of Crystal Growth

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“…CS-MBE method is suitable for low cost and low substrate temperature deposition. Preparation of high quality GaN film grown by CS-MBE method was achieved by compensating the loss of nitrogen during the growth [5]. However, there is few report related to doping of the CS-MBE growth for GaN layer.…”

Section: Introductionmentioning

confidence: 99%

Preparation of europium‐doped GaN and AlGaN films grown by radical‐nitrogen‐assisted compound‐source MBE

Yudate

Koyama

Shirakata

2015

Phys. Status Solidi C

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By the compound‐source molecular beam epitaxy (CS‐MBE), GaN:Eu and AlGaN films grown on both Al2O3(0001) and GaAs(100) substrates were prepared. Under RHEED observation, streak RHEED patterns from GaN were observed. This result shows that the surface of the film grown by CS‐MBE is atomically flat. From the XRD measurements, for GaN:Eu/Al2O3(0001), the film was oriented to c‐axis. On the other hands, for GaN:Eu/GaAs(100), the layer includes both the hexagonal and cubic phases. From the PL measurements, the PL spectra of both GaN:Eu/Al2O3 and GaN:Eu/GaAs(100) showed PL peaks related to Eu3+ ion. For GaN:Eu/GaAs(100), it is possible that part of Eu atom incorporates cubic‐GaN site (© 2015 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Compound-source molecular beam epitaxy of GaN using GaN powder and ammonia as sources

Cited by 7 publications

References 9 publications

GaN growth on (111)Al substrates by CS‐MBE and their chemical lift‐off technique

GaN growth on (111)Al substrates by CS‐MBE and their chemical lift‐off technique

Nitridation of (1 1 1)Al substrates for GaN growth by molecular beam epitaxy

Preparation of europium‐doped GaN and AlGaN films grown by radical‐nitrogen‐assisted compound‐source MBE

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