2020
DOI: 10.1109/tcpmt.2020.3024998
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Comprehensive Analysis of a Cu Nitride Passivated Surface That Enhances Cu-to-Cu Bonding

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Cited by 15 publications
(6 citation statements)
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“…The bonding strength can be significantly increased by creating a copper nitride coating on the copper surface using a two-step plasma process, which can produce low-temperature copper bonding and a shear strength of up to 30 MPa [ 102 ]. Figure 20 depicts a schematic diagram of the two-step plasma treatment [ 103 ]. The silicon wafer is first covered with a copper layer, and the deposition method’s addition of a reinforced copper film with an argon gas stream is the first plasma treatment phase.…”
Section: Sip Reliability Optimization Solutionmentioning
confidence: 99%
“…The bonding strength can be significantly increased by creating a copper nitride coating on the copper surface using a two-step plasma process, which can produce low-temperature copper bonding and a shear strength of up to 30 MPa [ 102 ]. Figure 20 depicts a schematic diagram of the two-step plasma treatment [ 103 ]. The silicon wafer is first covered with a copper layer, and the deposition method’s addition of a reinforced copper film with an argon gas stream is the first plasma treatment phase.…”
Section: Sip Reliability Optimization Solutionmentioning
confidence: 99%
“…In this study, PVD-deposited copper nitride (CuN) as a cost-effective passivation material has been proposed. CuN, applied as a surface protection layer, has been reported using a two-step plasma treatment method and demonstrated blanket Cu-Cu bonding at 260℃ [15], [16]. It has been proposed that CuN exhibits stability at room temperature but decomposes into Cu and N2 when heated [17]- [19].…”
Section: Introductionmentioning
confidence: 99%
“…Previous studies reported that the Cu-to-Cu direct bonding can be achieved under a vacuum or ambient atmosphere [16][17][18][19][20][21]. Some researchers adopted plasma pre-treatments [22] or metal capping approach [23] to lowering bonding temperatures, while others using nanotwinned Cu to achieve low temperature (under 250 °C) bonding [24,25]. However, the electrical properties of the Cu joints are not well-understood.…”
Section: Introductionmentioning
confidence: 99%