2022
DOI: 10.21203/rs.3.rs-2343828/v1
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Comprehensive analysis of current leakage at individual screw and mixed threading dislocations in freestanding GaN substrates

Abstract: The electrical characteristics of Schottky contacts on individual threading dislocations (TDs) with a screw-component in GaN substrates and the structures of these TDs were investigated to assess the effects of such defects on reverse leakage currents. Micrometer-scale platinum/GaN Schottky contacts were selectively fabricated on screw- and mixed-TD-related etch pits classified based on the pit size. Current-voltage (I-V) data acquired using conductive atomic force microscopy showed that very few of the screw … Show more

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