Comprehensive analysis of electro thermally driven nanoscale insulator–metal transition SmNiO₃-based selector for cross-point memory array

Abstract

To implement a cross-point memory array successfully, it is highly required to develop nonlinear selector devices. Insulator-metal transition (IMT) devices are promising candidates for selector applications. Although IMT characteristics of SmNiO 3 with a high transition temperature of 130 °C have already been reported, the film deposition conditions following high-pressure oxygen annealing at high temperatures are not practical for high-density memory applications. In this report, we propose a simple electrical method to form a localized IMT SmNiO 3 region in a sputterdeposited SmNiO x film. The nanoscale IMT device formed by the electro thermal effect shows promising selector characteristics such as switching uniformity, switching endurance (>10 5 cycles), and high temperature stability. The feasibility of good selector characteristics is also investigated by serially connecting the selector device (SmNiO 3 IMT) to a Ta/Ta 2 O 5 /Pt resistive random access memory (ReRAM) device.

High‐Performance GdNiO3Epitaxial Film Memristor for Neuralactivity Analysis

“…These results are consistent with the conclusions of studies related to oxygen vacancy interface effects. [ 45–48 ] Also in this device, since GNO is a p‐type semiconductor, [ 49 ] and the top electrode W is a reactive electrode, [ 50 ] we suggest that resistive switching behavior of the device is due to a change in the Schottky‐like barrier formed by a high density of interfacial states induced by oxygen vacancies at the W/GNO interface. [ 51 ] This interfacial effect between shallow work function metals and p‐type semiconductors is similar to the model of charge‐trapping interfacial state‐induced energy band bending proposed by Sama et al.…”

A SmNiO3 memristor with artificial synapse function properties and the implementation of Boolean logic circuits

“…29 SNO is a p-type oxide semiconductor. 30 W is a reactive electrode 31 with small electronegativity, which can extract a large number of oxygen atoms from the surface of the SNO layer. The high-density interfacial states induced by oxygen vacancies can cause a large degree of band bending at the W/SNO interface, resulting in a Schottky-like barrier as shown in Fig.…”

Cell Size Effects and Distinct Current Conduction Behaviors for Hafnium‐Oxide‐Based Selectors with Vanadium as Top Electrode

“…Some metal-oxide-based materials such as SmNiO 3 , niobium oxide, and vanadium oxide (VO x ) have been applied to the device fabrication, and their threshold switching (TS) properties have been investigated. [4][5][6][7][8][9][10] Previous research has reported interesting TS properties of the VO x -based selectors for their high capability integrated within current fabrications even though their on-off ratio might not be impressive, compared to the ovonic threshold switching selectors. [11][12][13][14][15][16] The intrinsic mechanisms for both vanadium (V) and VO x materials have also been previously examined and compared.…”

“…Some metal‐oxide‐based materials such as SmNiO 3 , niobium oxide, and vanadium oxide (VO x ) have been applied to the device fabrication, and their threshold switching (TS) properties have been investigated. [ 4–10 ]…”