Comprehensive Analysis of Lead-Free Perovskite (CsSn0.5Ge0.5I3) Solar Cell: Impact of Active Layer Thickness and Defect Density

Yadav, Sarita; Gupta, Saral K; Negi, C. M. S.

doi:10.1007/s13538-024-01444-8

Cited by 2 publications

(1 citation statement)

References 42 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…A decrease in the shunt resistance indicates the enhanced leakage caused by the increase in charge recombination due to the increasing trap density. Consequently, degrades the collection efficiency and thus reduces the FF [42].…”

Section: Resultsmentioning

confidence: 99%

Engineering the active layer of lead-free perovskite (CH₃NH₃SnI₃) solar cells using numerical simulation

Yadav,

Gupta,

Negi

2024

Phys. Scr.

Self Cite

View full text Add to dashboard Cite

We conduct a thorough numerical simulation to examine the impact of the thickness, defect density, and doping density of the active layer on the photovoltaic performance of the lead-free CH3NH3SnI3 perovskite solar cell (PSC). We observe that increasing the thickness of the active layer initially from 100 nm to 400 nm improved the power conversion efficiency (PCE) from 10.4% to 11.6%. However, further increasing the thickness to 800 nm resulted in a slight decline in PCE to 11.1%. This unexpected trend can be attributed to the high carrier mobility of charges in the CH3NH3SnI3 perovskite, which enables fast extraction of charge carriers, offsetting losses due to charge recombination. Increasing active layer trap density substantially declines the PCE from 11.5% at 1014 cm-3 to 7.5% at 1018 cm-3, as a result of the noticeable drop in open-circuit voltage (VOC) and fill factor (FF) with a growing defect density due to the enhancement in trap-assisted recombination. This is backed by a striking reduction in the shunt resistance upon increasing the defect density. Raising the active layer doping firstly enhances the PCE, reaching a peak value of 12.5% at the active layer doping density of 1017 cm-3, after which the PCE decreases as the doping density continues to increase. We explain these observations by energy level diagrams deduced at various doping levels.

show abstract

Section: Resultsmentioning

confidence: 99%

Engineering the active layer of lead-free perovskite (CH₃NH₃SnI₃) solar cells using numerical simulation

Yadav,

Gupta,

Negi

2024

Phys. Scr.

Self Cite

View full text Add to dashboard Cite

show abstract

Theoretical improvement of the energy conversion efficiency of an AZO/CdTe heterojunction solar cell to over 27% by incorporating FeSi₂ as a second absorber layer

Medina,

Andrés,

Espinosa

et al. 2024

Phys. Scr.

View full text Add to dashboard Cite

This paper presents the numerical analysis of cadmium telluride (CdTe) based solar cells using iron di silicide (FeSi2) as the second absorber layer and aluminum-doped zinc oxide (AZO) as the window layer. The photovoltaic performance of solar cells with Al/AZO/CdTe/FeSi2/Ni structure was analyzed and improved by SCAPS-1D software. When analyzing the influence of thickness and carrier concentration on the photovoltaic performance, it was found that the optimum values for the CdTe layer were 300 nm and 1015 cm-3, for the AZO layer they were 10 nm and 1018 cm-3, while for the FeSi2 layer they were 1 µm and 1018 cm-3. The defect density (Nt) at the AZO/CdTe and CdTe/FeSi2 interfaces was also analyzed, obtaining that the optimum value of Nt is 1010 cm-2 at both interfaces. Device optimization is achieved by obtaining a maximum Power Conversion Efficiency (PCE) of 27.22% with an open circuit voltage (Voc) of 0.63 V, a short circuit current density (Jsc) of 51.43 mA/cm2 and a fill factor (FF) of 83.06%, which makes FeSi2 a potential alternative for the development of CdTe-based solar cells due to its absorption of photons with lower energy wavelengths.

show abstract

Comprehensive Analysis of Lead-Free Perovskite (CsSn0.5Ge0.5I3) Solar Cell: Impact of Active Layer Thickness and Defect Density

Cited by 2 publications

References 42 publications

Engineering the active layer of lead-free perovskite (CH₃NH₃SnI₃) solar cells using numerical simulation

Engineering the active layer of lead-free perovskite (CH₃NH₃SnI₃) solar cells using numerical simulation

Theoretical improvement of the energy conversion efficiency of an AZO/CdTe heterojunction solar cell to over 27% by incorporating FeSi₂ as a second absorber layer

Contact Info

Product

Resources

About

Comprehensive Analysis of Lead-Free Perovskite (CsSn0.5Ge0.5I3) Solar Cell: Impact of Active Layer Thickness and Defect Density

Cited by 2 publications

References 42 publications

Engineering the active layer of lead-free perovskite (CH3NH3SnI3) solar cells using numerical simulation

Engineering the active layer of lead-free perovskite (CH3NH3SnI3) solar cells using numerical simulation

Theoretical improvement of the energy conversion efficiency of an AZO/CdTe heterojunction solar cell to over 27% by incorporating FeSi2 as a second absorber layer

Contact Info

Product

Resources

About

Engineering the active layer of lead-free perovskite (CH₃NH₃SnI₃) solar cells using numerical simulation

Engineering the active layer of lead-free perovskite (CH₃NH₃SnI₃) solar cells using numerical simulation

Theoretical improvement of the energy conversion efficiency of an AZO/CdTe heterojunction solar cell to over 27% by incorporating FeSi₂ as a second absorber layer