Comprehensive Analysis of Random Telegraph Noise Instability and Its Scaling in Deca–Nanometer Flash Memories

Ghetti, A.; Compagnoni, Christian Monzio; Spinelli, A.S.; Visconti, A.

doi:10.1109/ted.2009.2024031

Cited by 214 publications

(141 citation statements)

References 16 publications

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“…Due to the comparatively large amount of charge carriers in the channel, in large devices, a single capture or emission event has a small impact on the MOSFET parameters. In stark contrast, in nanoscale MOSFETs, such events affect device performance severely [6][7][8]. Depending on the position of the defect, the percolation path is disturbed as can be seen in the center and right panels of Fig.…”

Section: Scaling Trend Of Mosfets and Challengesmentioning

confidence: 99%

Transformation: nanotechnology—challenges in transistor design and future technologies

Ullmann

2017

Elektrotech. Inftech.

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The transistor is one of the key inventions of modern society which have paved the way for innovative technologies being so ubiquitous in everyday life. Due to their economic importance and the pressure to keep production costs low while simultaneously increasing efficiency, transistors have been scaled to the deca-nanometer regime during the last decades. This excessive downscaling of device dimensions has now reached several physical limits, whereby transistor design and fabrication have been challenged numerous times. Although some of these challenges have been overcome by the use of new materials and cleverly designed device geometries, a lot of additional effort must be put into the research of innovative nanotechnologies in order to open up for new opportunities. In this work, we summarize recent developments in transistor technology and give a short overview of possible future technologies.Keywords: transistor; MOSFET; reliability; nanotechnology Transformation: Nanotechnologie -Herausforderungen beim Design von Transistoren und Technologien der Zukunft. Der Transistor ist eine der wichtigsten Erfindungen der modernen Gesellschaft, die den Weg für innovative und im Alltag allgegenwär-tige Technologien geebnet hat. Aufgrund ihrer wirtschaftlichen Bedeutung und des Drucks, die Produktionskosten niedrig zu halten und gleichzeitig die Effizienz zu steigern, wurden die Dimensionen der Transistoren in den letzten Jahrzehnten skaliert und haben kürz-lich den 14-nm-Bereich erreicht. Diese Skalierung der Abmessungen hat inzwischen mehrere physikalische Grenzen erreicht, wobei Design und Herstellung von Transistoren mehrfach vor Herausforderungen standen. Obwohl einige dieser Herausforderungen durch den Einsatz neuer Materialien und clever gestalteter Geometrien überwunden wurden, muss weiter in die Forschung investiert werden, um mittels Nanotechnologie neue Möglichkeiten zu erschließen. In dieser Arbeit fassen die Autoren die jüngsten Entwicklungen in derTransistortechnologie zusammen und geben einen kurzen Überblick über mögliche Technologien der Zukunft.

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Section: Scaling Trend Of Mosfets and Challengesmentioning

confidence: 99%

Transformation: nanotechnology—challenges in transistor design and future technologies

Ullmann

2017

Elektrotech. Inftech.

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“…This task was undertaken in [112,113], where 3D Monte Carlo simulations of electron transport were carried out, accounting for randomized doping and trap positions. Simulations were conducted within the drift-diffusion framework, neglecting the field dependence of mobility to avoid unphysical effects close to the ionized dopants and RTN trap.…”

Section: Rtn Amplitudementioning

confidence: 99%

“…Monte Carlo results for the statistical distribution of the V T shift due to a single RTN trap, ∆V 1 T , are shown in Figure 6: an exponential distribution was found, which can be easily characterized by its slope λ, usually expressed in mV/decade. A thorough parametric analysis of λ was carried out in [113,121], resulting in the following dependence:…”

Section: Rtn Amplitudementioning

confidence: 99%

Reliability of NAND Flash Memories: Planar Cells and Emerging Issues in 3D Devices

2017

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Abstract:We review the state-of-the-art in the understanding of planar NAND Flash memory reliability and discuss how the recent move to three-dimensional (3D) devices has affected this field. Particular emphasis is placed on mechanisms developing along the lifetime of the memory array, as opposed to time-zero or technological issues, and the viewpoint is focused on the understanding of the root causes. The impressive amount of published work demonstrates that Flash reliability is a complex yet well-understood field, where nonetheless tighter and tighter constraints are set by device scaling. Three-dimensional NAND have offset the traditional scaling scenario, leading to an improvement in performance and reliability while raising new issues to be dealt with, determined by the newer and more complex cell and array architectures as well as operation modes. A thorough understanding of the complex phenomena involved in the operation and reliability of NAND cells remains vital for the development of future technology nodes.

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“…[1][2][3][4][5][6][7][8] RTN is induced by capture/emission of single electron in a gate oxide trap, which is generated by fabrication process or program/erase cycling stress. Therefore, RTN results in threshold voltage (Vth) fluctuation as shown in Figure 1.…”

Section: Introductionmentioning

confidence: 99%

Channel doping concentration and cell program state dependence on random telegraph noise spatial and statistical distribution in 30 nm NAND flash memory

Toshihiro¹,

Miyaji²

2015

Jpn. J. Appl. Phys.

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The dependence of spatial and statistical distribution of random telegraph noise (RTN) in a 30 nm NAND flash memory on channel doping concentration NA and cell program state Vth is comprehensively investigated using three-dimensional Monte Carlo device simulation considering random dopant fluctuation (RDF). It is found that single trap RTN amplitude Vth is larger at the center of the channel region in the NAND flash memory, which is closer to the jellium (uniform) doping results since NA is relatively low to suppress junction leakage current. In addition, Vth peak at the center of the channel decreases in the higher Vth state due to the current concentration at the shallow trench isolation (STI) edges induced by the high vertical electrical field through the fringing capacitance between the channel and control gate. In such cases, Vth distribution slope  cannot be determined by only considering RDF and single trap.

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Comprehensive Analysis of Random Telegraph Noise Instability and Its Scaling in Deca–Nanometer Flash Memories

Cited by 214 publications

References 16 publications

Transformation: nanotechnology—challenges in transistor design and future technologies

Transformation: nanotechnology—challenges in transistor design and future technologies

Reliability of NAND Flash Memories: Planar Cells and Emerging Issues in 3D Devices

Channel doping concentration and cell program state dependence on random telegraph noise spatial and statistical distribution in 30 nm NAND flash memory

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