2021
DOI: 10.1007/s12274-021-3697-0
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Comprehensive analysis of two-dimensional charge transport mechanism in thin-film transistors based on random networks of single-wall carbon nanotubes using transient measurements

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Cited by 12 publications
(6 citation statements)
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“…The conductivity map (Figure a) of a semiconducting CNT network was obtained via the same method as described in Figure . Overall, the semiconducting CNT network exhibited 1–2 orders of magnitude smaller conductivity than metallic CNTs (Figure ), which is consistent with previously reported results. Also, it should be noted that the regions of semiconducting individual CNTs had smaller conductivities than semiconducting CNT bundles. For example, the conductivity of an individual (marked by (1), thickness ∼1.4 nm) or a bundled CNT (marked by (2), thickness ∼14 nm) was found to be ∼ 46.3 or ∼ 332.9 S cm –1 , respectively.…”
Section: Resultssupporting
confidence: 91%
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“…The conductivity map (Figure a) of a semiconducting CNT network was obtained via the same method as described in Figure . Overall, the semiconducting CNT network exhibited 1–2 orders of magnitude smaller conductivity than metallic CNTs (Figure ), which is consistent with previously reported results. Also, it should be noted that the regions of semiconducting individual CNTs had smaller conductivities than semiconducting CNT bundles. For example, the conductivity of an individual (marked by (1), thickness ∼1.4 nm) or a bundled CNT (marked by (2), thickness ∼14 nm) was found to be ∼ 46.3 or ∼ 332.9 S cm –1 , respectively.…”
Section: Resultssupporting
confidence: 91%
“…By distinguishing the semiconducting CNT bundles and individual CNTs (Figure S5b) based on topography map (Figure S4a), we found that the region with a high σ with a large variation of N T (marked by the red dotted line) corresponded to the region of CNT bundles (Figure S5c). Presumably, bandgap overlapping between individual semiconducting CNTs in the bundles led to an increase in the conductivity . Also, the Schottky barrier at the contact area between individual CNTs in the bundles should have induced a large variation of charge trap densities. ,,, However, in the regions of individual CNTs , we observed the scaling behavior of σ ∝ N T –1 (Figure S5d), which could be attributed to the ballistic transport as reported previously. , It implies that some regions of individual semiconducting CNTs exhibited the ballistic transport behavior when the CNT network reached an on-state by a high negative gate bias.…”
Section: Resultssupporting
confidence: 78%
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“…51 DA is oxidized to dopamine-O-quinone while electrostatically interacting with the Co-C-matrix/GCE via covalent or π-π bonds. 51,52 The overall reversible oxidation mechanism of DA is expressed as follows: 31…”
Section: Resultsmentioning
confidence: 99%
“…Single-walled carbon nanotubes (SWCNTs) have an energy bandgap of ~2 eV, which is typically used as a semiconductor film [39,40]. Many efforts have been made to develop CNT-based TFTs owing to their transparency and easy-to-fabricate process with solution processability [40,41]. In this regard, progress in implementing CNTs-based circuits has been reported.…”
Section: Cnt-based Thin-film Digital Circuitsmentioning
confidence: 99%