Comprehensive Analytical Approach to Predicting Freeze-Out and Exhaustion for Uniform Single-Impurity Semiconductors in Equilibrium

Pieper, R.J.; Michael, S.

doi:10.1109/te.2005.849732

Cited by 5 publications

(6 citation statements)

References 7 publications

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“…The conventional SPICE model of MOSFET cannot model the low-temperature character properly. Actually, although there have been many researches about the character and operation of MOSFET under low temperature [6][7][8], and many analytical or numerical model which emphasize the academic study have been constructed [9][10][11][12][13], there is no standard SPICE model for 77 K operation of MOSFET yet. Yi et al [14].…”

Section: Introductionmentioning

confidence: 99%

320×256 Readout Integrated Circuit for Infrared Focal Plane Arrays with Low-temperature MOSFET Model

et al. 2011

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A 320×256 readout integrated circuit (ROIC) for infrared focal plane arrays is designed and fabricated with 0.5 μm n-well Complementary Metal Oxide Semiconductor (CMOS) process. A sub-circuit Simulation Program with Integrated Circuit Emphasis (SPICE) model of Metal Oxide Semiconductor Field Effect Transistor (MOSFET) for low-temperature simulation is also presented and has been applied in the ROIC design. An auto-bias capacitor transimpedance amplifier pixel structure with selectable input gain is used to prevent pixel crosstalk and accommodate the dynamic range requirements. A shared buffer and dynamic tail current technology are applied in the column readout stage to reduce the power consumption. A fast-settling, low static power, high-linearity output buffer have also been suggested. The experimental chip of the proposed ROIC has been measured at 77 K. Under the power supply of 5.5 V, it has a power dissipation of 78.3 mW. The linearity is above 99%. The ROIC can operate at 110 frames/s when the clock is 10 MHz. The measured results also verify the validity of the low-temperature SPICE model of MOSFET.

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Section: Introductionmentioning

confidence: 99%

320×256 Readout Integrated Circuit for Infrared Focal Plane Arrays with Low-temperature MOSFET Model

et al. 2011

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“…Most semiconductor devices and ICs are designed to be operated in exhaustion regime also known as "extrinsic regime" see Figure 1, borrowed from B. Streetman's classic undergraduate text book 1 , for which the majority carrier concentration is approximately equal to the dopant concentration e.g. N D =10 15 /cm 3 . Again, in reference to Fig.…”

Section: Introductionmentioning

confidence: 99%

“…A simplified three regime model for the principal features observed on Fig. 1 is represented on Figure 2 with identifiable graphical guidelines 2,3 . Validity of the guidelines rests on several assumptions the first of which is the semiconductor is singly doped.…”

Section: Introductionmentioning

confidence: 99%

“…The roll-off slope of the curve in freeze-out, a specified graphical guideline on Fig. 2, is proportional to an energy level δE, the acceptor energy level for P-type dopant, or donor energy level, for N-type dopant 2,3 . Figure 3, shows a band diagram.…”

Section: Introductionmentioning

confidence: 99%

“…If the Fermi energy level does not come within 3kT, as identified on Fig. 3, of either the conduction band edge, E C, or valence band edge, E V , the Boltzman approximation is assumed to be valid 1,3 . Significant background material has been summarized in Table 1, which covers independent variables and physical constants, and Table 2, which summarizes the dependent variables and related equations involving dependent and independent variables.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

An Exact Analysis For Freezeout And Exhaustion In Single Impurity Semiconductors

Pieper¹,

Michael

2005 Annual Conference Proceedings

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A sub-circuit MOSFET model with a wide temperature range including cryogenic temperature

Jia¹,

Sun²,

Shi³

2011

J. Semicond.

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Comprehensive Analytical Approach to Predicting Freeze-Out and Exhaustion for Uniform Single-Impurity Semiconductors in Equilibrium

Cited by 5 publications

References 7 publications

320×256 Readout Integrated Circuit for Infrared Focal Plane Arrays with Low-temperature MOSFET Model

320×256 Readout Integrated Circuit for Infrared Focal Plane Arrays with Low-temperature MOSFET Model

An Exact Analysis For Freezeout And Exhaustion In Single Impurity Semiconductors

A sub-circuit MOSFET model with a wide temperature range including cryogenic temperature

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