Comprehensive empirical modeling of ScAlN/AlGaN/GaN ferroelectric HEMT
Dariskhem Pyngrope,
Nidhi Chaturvedi,
Sudeb Dasgupta
et al.
Abstract:This correspondence introduces a concise depiction of a High Electron Mobility transistor (HEMT) utilizing a model that incorporates the
effect of ferroelectric (FE) polarization on the empirical expression for drain current. This is accomplished by modifying the basic Shockley Equation (S.E) for MESFET. The model employed in this investigation is particularly geared towards investigating the impact of the counterclockwise hysteresis effect due to the use of dielectric ScAlN on the transfer characteris… Show more
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