Comprehensive Examination on Resistive Random Access Memory

Abstract

With the latest advances in materials science, resistive random access memory (RRAM) devices are attracting non-volatile, low power consumption, non-destructive read, and high density memory. Related performance parameters for RRAM devices include operating voltage, operating speed, resistivity, durability, retention time, device yield, and multi-level storage. Numerous resistive mechanisms, such as conductive filaments, space charge limited conduction, trap charging and discharging, Schottky emission, and pool-Frenkel emission, have been proposed to explain the resistance switches of RRAM devices. Therefore, in this work, different oxide-based random access memories (RRAMs) were provided for comprehensive investigation of neuromorphiccalculations. With the development of RRAM, the physical mechanism of conduction, the basic history of neuromorphic calculations begins. Finally, suggestions for future research, as well as waiting for the challenges of RRAM equipment, are given.