2022
DOI: 10.1109/ted.2022.3143490
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Comprehensive Investigation on Electrical Properties of Split-Gate Trench Power MOSFETs Under Mechanical Strains

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Cited by 6 publications
(2 citation statements)
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“…The SG structure serves as a vertical field plate which optimizes the electric field distribution of the drift region under the instruction of RESURF theory [25]. The grounded SG electrode isolates the control gate from the drift region and the drain electrode, which results in a drastic decrease in the C gd [26][27][28]. Hence, the Q gd is reduced and better switching performance is assured.…”
Section: Introductionmentioning
confidence: 99%
“…The SG structure serves as a vertical field plate which optimizes the electric field distribution of the drift region under the instruction of RESURF theory [25]. The grounded SG electrode isolates the control gate from the drift region and the drain electrode, which results in a drastic decrease in the C gd [26][27][28]. Hence, the Q gd is reduced and better switching performance is assured.…”
Section: Introductionmentioning
confidence: 99%
“…5,6) One of the concerns in SiC device reliability is the impact of inevitably induced strain. The occurrence of strain in SiC devices could be process-induced, e.g., locally induced strain due to wafer process such as trench etching in advanced trench-channel MOSFETs, 7,8) and globally induced thermal strain on the whole wafer due to high-temperature processes such as epitaxial layer growth, gate dielectric formation, contact formation, and so on. 9) Systematic study in the variability of V th in strained SiC MOSFET is necessary to achieve precise V th control.…”
mentioning
confidence: 99%