2021
DOI: 10.1021/acsami.1c17578
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Comprehensive Model for the Transformation of Zinc Nitride Metastable Layers

Abstract: In this work, we performed systematic studies on the oxidation of zinc nitride metastable layers using a climate chamber with controlled temperature and relative humidity. The electrical properties of the samples were in situ analyzed using a programmable microprocessor with a voltage divider, while the structural and optical properties were ex situ measured by scanning electron microscopy, elastic recoil detection analysis, and spectroscopic ellipsometry. Our results show that zinc nitride transformation proc… Show more

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Cited by 6 publications
(4 citation statements)
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“…Remarkably, the GaN-capped Zn 3 N 2 sample remained stable even under aqueous conditions, with no detectable change to the visible appearance, Hall mobility, or free charge carrier concentration following its much longer immersion in water. Considering that humidity in air is known to be the primary cause for oxidative degradation of Zn 3 N 2 , [17,23] this experiment represents an aggressive stability test, highlighting the efficacy of the developed amorphous GaN film as a protection layer for Zn 3 N 2 and potentially offering opportunities for future explorations of GaN-protected Zn 3 N 2 for photoelectrochemical applications. [24,25]…”
Section: Resultsmentioning
confidence: 99%
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“…Remarkably, the GaN-capped Zn 3 N 2 sample remained stable even under aqueous conditions, with no detectable change to the visible appearance, Hall mobility, or free charge carrier concentration following its much longer immersion in water. Considering that humidity in air is known to be the primary cause for oxidative degradation of Zn 3 N 2 , [17,23] this experiment represents an aggressive stability test, highlighting the efficacy of the developed amorphous GaN film as a protection layer for Zn 3 N 2 and potentially offering opportunities for future explorations of GaN-protected Zn 3 N 2 for photoelectrochemical applications. [24,25]…”
Section: Resultsmentioning
confidence: 99%
“…In addition, density differences between the two phases are expected to lead to film expansion, wherein complete oxidation can increase in the total layer thickness by a factor of ≈2, as reported by Ropero‐Real et al. [ 17 ] Thus, the change in measured carrier concentration is not considered absolute, but rather represents a qualitative indicator for the effect of film oxidation with time and provides a baseline for understanding transport characteristics of protected films (see below). In contrast, the Hall mobility is less sensitive to such uncertainties since it is not a function of film thickness.…”
Section: Resultsmentioning
confidence: 99%
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“…Plasma-assisted pulsed laser deposition Zn3N2 [402] HfN [404] Plasma-enhanced atomic layer deposition Mo2N [419] NbN [421,422] TaN [423] Plasma-enhanced chemical vapor deposition AlN [183,184] Pulsed laser deposition Zn3N2 [401] TiN [403] NbN [405] Cu3N [406] AlN [188,190] Zn3N2 [370][371][372][373][374][375] CrN [377] CoN (Co target) [493] HfN [494] Hf3N4 [494,495] RF reactive magnetron sputtering HfN (HfN target) [367][368][369] ZnN (ZnN target) [366] TiN (Ti target) [376] AuN2 (Au target) [378] Zr3N4 [379] Co3N [380] Room temperature ion beam assisted sputtering NbN [496] Thermal decomposition Ca2N [497] Thermal evaporation Zn3N2 [398,399] Cu3N [400] Topochemical nitridation of TMD by NH3 at high temperature Mo2N [438] MoN [435,438] The common methods for synthesizing MNs thin films include radio frequency (RF) magnetron sputtering [366][367]…”
Section: Synthetic Routes Corresponding 2d Mnsmentioning
confidence: 99%